<title>On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation</title>

Abstract

The results of consistent (beyond the commonly used approximation of quasi-neutrality) theoretical analysis ofthe efficiency of inter-band photoexcitation of carriers in the case of absorption ofweak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. It is shown that the carrier photoexcitation efficiency can be drasticly increased at the cost of increase in the concentration of recombination centers. Also it is shown that the solution beyond approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.

The Theory of Giant Splash of Photoresponse in Semiconductors at Low-Level Illumination with Increasing Concentration of Deep Recombination Impurity

“…From physical essence of considered effects, it follows that similar effects can occur in other mediums with recombination of dissociative or ion-ion type, for example, in multicomponent plasma [36]. More details about topic are given in [37][38][39][40][41][42][43][44][45][46].…”