Character of elevated-temperature fracture of an alloyed nickel-chromium material

Kondratyuk, S. E.; L'vova, G. G.; Radomysel'skii, I. D.; Shlyakhtich, I. I.

doi:10.1007/bf00802331

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2021

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“…Using Cr as buffer layer for hBN growth has the following advantages: ) The lattice constants of hBN and Cr are 0.25 nm and 0.29 nm [29,30], respectively, the lattice mismatch is only 3.3%. ) Nitrogen atoms are more challenging to adsorb on the substrate than boron atoms.…”

Section: Introductionmentioning

confidence: 99%

Effect of employing chromium as a buffer layer on the crystallinity of hexagonal boron nitride films grown by LPCVD

Chen

Luan

Zhang

et al. 2021

J Mater Sci: Mater Electron

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Using chromium (Cr), which was deposited by radio frequency magnetron sputtering, as a buffer layer for synthesizing high-quality hexagonal boron nitride (hBN) lms by low-pressure chemical vapor deposition (LPCVD) was demonstrated. The effect of growth temperature and annealing process on the quality of the Cr buffer layer was investigated. The characterization of the dependence of hBN lm quality on growth temperature, substrate, and annealing process was discussed. All evidence shows that using a Cr buffer layer can signi cantly improve the crystalline quality of hBN. A DUVPD based on hBN lm using Cr as the bottom electrode was fabricated with a small leakage current. The photocurrent is 3.5 nA at a bias of 500 V, and it exhibits good switching characteristics.

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Section: Introductionmentioning

confidence: 99%