Effect of employing chromium as a buffer layer on the crystallinity of hexagonal boron nitride films grown by LPCVD

Abstract

Using chromium (Cr), which was deposited by radio frequency magnetron sputtering, as a buffer layer for synthesizing high-quality hexagonal boron nitride (hBN) lms by low-pressure chemical vapor deposition (LPCVD) was demonstrated. The effect of growth temperature and annealing process on the quality of the Cr buffer layer was investigated. The characterization of the dependence of hBN lm quality on growth temperature, substrate, and annealing process was discussed. All evidence shows that using a Cr buffer layer can signi cantly improve the crystalline quality of hBN. A DUVPD based on hBN lm using Cr as the bottom electrode was fabricated with a small leakage current. The photocurrent is 3.5 nA at a bias of 500 V, and it exhibits good switching characteristics.

Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride

“…Cu(111) on sapphire provides an isolated and natural 2DES which exists as a surface state trapped between a Cu band gap along the [111] direction on the substrate side, and the insulating (vacuum or hBN) interface on the other side. Although hBN can be grown on other metals, such as Ir, , Rh, Ru, Cr, Fe, Ni, − Pd, , Pt, , we have chosen the Cu(111) system because of its demonstrated compatibility with wafer-scale technology and because its surface state is exceeding well characterized. The 2D electrons within this surface state have been used for a variety of fundamental experiments involving coherent quantum nanostructures and atom manipulation accessing quantum phase, quantum spin, and designer quantum materials .…”