Using chromium (Cr), which was deposited by radio frequency magnetron sputtering, as a buffer layer for synthesizing high-quality hexagonal boron nitride (hBN) lms by low-pressure chemical vapor deposition (LPCVD) was demonstrated. The effect of growth temperature and annealing process on the quality of the Cr buffer layer was investigated. The characterization of the dependence of hBN lm quality on growth temperature, substrate, and annealing process was discussed. All evidence shows that using a Cr buffer layer can signi cantly improve the crystalline quality of hBN. A DUVPD based on hBN lm using Cr as the bottom electrode was fabricated with a small leakage current. The photocurrent is 3.5 nA at a bias of 500 V, and it exhibits good switching characteristics.
Using chromium (Cr), which was deposited by radio frequency magnetron sputtering, as a buffer layer for synthesizing high-quality hexagonal boron nitride (hBN) films by low-pressure chemical vapor deposition (LPCVD) was demonstrated. The effect of growth temperature and annealing process on the quality of the Cr buffer layer was investigated. The characterization of the dependence of hBN film quality on growth temperature, substrate, and annealing process was discussed. All evidence shows that using a Cr buffer layer can significantly improve the crystalline quality of hBN. A DUVPD based on hBN film using Cr as the bottom electrode was fabricated with a small leakage current. The photocurrent is 3.5 nA at a bias of 500 V, and it exhibits good switching characteristics.
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