Chapter 5 Transition Metals in III/V Compounds

Hennel, A. M.

doi:10.1016/s0080-8784(08)62801-x

Cited by 11 publications

(5 citation statements)

References 146 publications

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“…First-row transition metals (TMs) with a 3d n electronic configuration have been very extensively investigated as impurities in GaAs, GaP and InP [159,160]. They can be incorporated on group III sites and form deep single or double acceptors, while Ti, V and Cr also form deep donors.…”

Section: Transition Metal Impuritiesmentioning

confidence: 99%

Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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This review summarizes the presently available knowledge concerning hydrogen-impurity complexes in III-V compounds. The impurities form shallow acceptors on group III sites (Be, Zn, Cd) and on group V sites (C, Si, Ge) as well as shallow donors on group V sites (S, Se, Te) and on group III sites (Si, Sn). These complexes are mainly revealed by their hydrogen stretching modes. Therefore, nearly all information about their structure and dynamic properties is derived from vibrational spectroscopy. The complexes of shallow impurities with hydrogen have been most extensively investigated in GaAs, GaP and InP. This holds also for Mg-H in GaN. The complexes exhibit a different microscopic structure, which is discussed in detail. The isoelectronic impurity nitrogen, complexed with one hydrogen atom, is investigated in detail in GaAs and GaP. Those complexes can exist in different charge states. The experimental results such as vibrational frequencies, the microscopic structure and the activation energy for reorientation for many of these complexes are in very good agreement with results of ab initio calculations. Different types of oxygen-hydrogen complexes in GaAs and GaP are described, with one hydrogen atom or two hydrogen atoms bonded to oxygen. Three of these complexes in GaAs were found to be electrically active.

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Section: Transition Metal Impuritiesmentioning

confidence: 99%

Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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“…The two optimum IB levels were located at 0.5 and 0.92 eV, respectively. Hennel [22] studied the energy levels introduced by different transition elements in GaAs. Ti may be a candidate to provide an energy level at 0.92 eV in GaAs.…”

Section: Discussionmentioning

confidence: 99%

The detailed analysis of auger effect on the efficiency of intermediate band solar cells

Navruz

Saritaş

2009

Solar Energy Materials and Solar Cells

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“…Many impurities are known to introduce deep centers in semiconductors (energy levels inside the bandgap, far in energy terms from the CB and VB) [25]. These deep centers are conventionally recognized as inductors of non-radiative recombination.…”

Section: The Bulk Approachmentioning

confidence: 99%

Intermediate Band Solar Cells

Martı́

Ĺuque

2010

Advances in Science and Technology

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Intermediate band (IB) solar cells aim to exploit in solar cells the energy of below bandgap energy photons. They are based in a material that, in addition to the conventional conduction and valence bands, has an electronic band (named intermediate band) located inside the bandgap and separated from the conduction and valence band by a null density of states. The theoretical limiting efficiency of these cells (63.2 % at maximum concentration) is equivalent to a triple junction solar cell but requiring a single material instead. Several approaches are being followed worldwide to take to practice this concept that can be divided into two categories: quantum dots and bulk materials. This paper reviews the main experimental results obtained under both approaches.

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Chapter 5 Transition Metals in III/V Compounds

Cited by 11 publications

References 146 publications

Hydrogen-impurity complexes in III–V semiconductors

Hydrogen-impurity complexes in III–V semiconductors

The detailed analysis of auger effect on the efficiency of intermediate band solar cells

Intermediate Band Solar Cells

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