“…By using spin-coated films of a liquid crystalline bis(phthalocyaninato) lutetium complex Lu[(α-Oct) 8 Pc] 2 , Ray et al fabricated bottom gated OFET devices, which showed a hole mobility of 1.5 × 10 −3 cm 2 V −1 s −1 with an on/off current ratio of 10 3 at a threshold voltage of −25 V. 434 After thermal annealing, the hole mobility was improved to 8.0 × 10 −3 cm 2 V −1 s −1 , together with an increased on/off ratio by two orders of magnitude and a reduced threshold voltage to half of that of the as-deposited films. Recently, through the study of spin-coated films of the gadolinium complex Gd[(α-Oct) 8 Pc] 2 , 435 Ray et al revealed that the OFET performance decreases along with scaling down the channel length of devices. The electronic transport properties of drop-casted films of a triple-decker complex Tb 2 [(BuO) 8 Pc] 3 were reported by Yamashita et al , which also show p-type mobilities in the range of 1–2 × 10 −5 cm 2 V −1 s −1 .…”