Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region

Abstract

Articles you may be interested inChannel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics A two-dimensional model for the subthreshold swing of short-channel double-gate metal-oxide-semiconductor field effect transistors with a vertical Gaussian-like doping profile A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metaloxide-semiconductor field-effect transistors J. Appl. Phys. 108, 074508 (2010); 10.1063/1.3488605 High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 105, 074505 (2009); 10.1063/1.3093884Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling

A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

“…From our previous work, 16 we use the expression of I DS CL (i.e., only considering inversion charges) followed as:…”

“…Before establishing the quantum model, we start from the classical drain current (I DS CL ) model previously reported. 16 From the I DS CL model, we implement the QM effects by applying the concepts of QM effects: 14 (1) threshold voltage shift (DV TH QM ) and (2) gate capacitance (C g ) degradation. For the validation of proposed model, the simulation results from 1D SCHRED simulation 17 and Silvaco 2D ATLAS simulation 18 are used for comparison.…”