Articles you may be interested inChannel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics A two-dimensional model for the subthreshold swing of short-channel double-gate metal-oxide-semiconductor field effect transistors with a vertical Gaussian-like doping profile A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metaloxide-semiconductor field-effect transistors J. Appl. Phys. 108, 074508 (2010); 10.1063/1.3488605 High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 105, 074505 (2009); 10.1063/1.3093884Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling
An analytical 2D model of subthreshold current (I DSsub ), subthreshold swing (S sub ), and threshold voltage (V TH ) roll-off with a variation of channel doping concentration (N A ) for symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the channel potential is obtained by solving the 2D Poisson's equation with the help of the evanescent method. Based on the obtained channel potential, I DSsub , S sub , and V TH roll-off expressions are derived in the analytical model. It is shown that the subthreshold characteristics predicted by the analytical model are in good agreement with commercially available 2D numerical simulation results for different channel length (L), channel film thickness (t si ), gate oxide (t ox ), and N A . V C 2013 AIP Publishing LLC. [http://dx.
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