Changes in Electron Concentration of Donor-Doped GaAs Crystals Caused by Annealing

Fuller, C. S.; Wolfstirn, K. B.

doi:10.1063/1.1702731

Cited by 53 publications

(14 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is also known [5] that similar heat treatment produces large changes of free electron concentration in these materials. Here we are interested in quantitative relation between changes of free electron concentration caused by annealing and the amount of impurity atoms involved in large defects.…”

Section: Introductionmentioning

confidence: 99%

On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te

1996

View full text Add to dashboard Cite

Extended type defects in heavily doped GaAs:Te (n 1 x 10 19 cm-3 ) after annealing at 700°C and 1150°C were studied by transmission electron microscopy, by high resolution technique and energy-dispersive X-ray analysis. Assuming, according to the literature that these defects are enriched in impurity atoms it is suggested that this solely is not sufficient to explain changes of electrical properties during annealing. Estimated amount of atoms involved in faulted dislocation loops seems to be too small, energy-dispersive X-ray microanalysis of precipitates did not show large differences in composition with the matrix.

show abstract

Section: Introductionmentioning

confidence: 99%

On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te

1996

View full text Add to dashboard Cite

show abstract

“…It was already reported that an annealing cauSes reverSible changes of the free electron concentration in sufficiently highly doped n-GaAs [12,13]. Here similarly reversible changes of DXS are reported.…”

mentioning

confidence: 49%

First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

Słupiński

Zielińska‐Rohozińska

1997

Acta Phys. Pol. A

View full text Add to dashboard Cite

Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related 1attice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.PACS numbers: 61.72.-y, 61.10.-i, 71.55.-i Highly doped semiconductors are routinely approximated by ideal solid solutions. Many experimental phenomena not consistent with such a model are accounted by introducing point defects (e.g. vacancies) and treating a semiconductor as double ideal solution. Here we briefly present X-ray scattering arguments that highly doped GaAs:Te exhibits properties of nonideal solid solution, i.e. one with spatial correlations of solute atoms.In the investigations of critical phenomena the scattering experiments supply the fundαmentαl information on microscopic correlations, order parameters and fluctuations [1,2]. Measurements of the critical scattering [3], with its intensity dependence on temperature of the type I α (Τc -T)x, Τ is a critical temperature and x a certain index, allowed to derive many well-known conclusions on phase transitions [1,2]. The best known are the density fluctuations which occur close to gas-liquid critical point, detected by light scattering (critical opalescence). Another one is neutron scattering detection of the order of atomic magnetic moments, which occurs in a ferromagnet when Curie temperature is approached from above.

show abstract

“…In heavily doped GaAs:Te reversible changes of the free electron concentration with the high temperatures annealing were observed since early sixties [1,2]. Tellurium doping of GaAs is used to provide n-type conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…Various hypotheses were proposed to explain this deactivation mechanism in GaAs:Te. Fuller and Wolfstirn [1] suggested creation of impurity molecules which trap electrons. Some papers indicate gallium vacancy associated with the Te As quasisubstitutional defect as responsible for the observed compensation eect [2,5,6].…”

Section: Introductionmentioning

confidence: 99%

Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure

et al. 2012

View full text Add to dashboard Cite

The annealing of heavily doped GaAs:Te can signicantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for dierent states of the GaAs:Te crystals caused by the annealing corresponding to dierent electron concentrations. The best EXAFS t for the samples with high electron concentration was obtained for the substitutional TeAs model with elongated TeGa bonds (as compared to the AsGa distance). For the samples in the low concentration state the best t was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium PACS: 61.05.cj, 61.72.uj

show abstract

Changes in Electron Concentration of Donor-Doped GaAs Crystals Caused by Annealing

Cited by 53 publications

References 7 publications

On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te

On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te

First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure

Contact Info

Product

Resources

About