1997
DOI: 10.12693/aphyspola.92.971
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First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

Abstract: Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spa… Show more

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