The diffusion of the Group III (B, Al, Ga, In, and Tl) and Group V (P, As, Sb, and Bi) elements in silicon has been measured in the temperature range 1050–1350°C. A method based on change in conductivity through the penetration layer has been used for B and P. The p-n junction method has been used for the other elements. Aside from B and P, which have similar diffusional properties, the acceptor elements diffuse more rapidly than the donor elements. Diffusion coefficients are given by DB, P=10.5 exp − (85 000/RT), DA1=8.0 exp − (80 000/RT), DGa=3.6 exp − (81 000/RT), DIn, T1=16.5 exp − (90 000/RT), DAs=0.32 ×exp − (82 000/RT), DSb=5.6 exp − (91 000/RT), DBi=1030 exp − (107 000/RT) with an average estimated error of about ±40%. This corresponds to an error in the activation energies of about ±5 kcal. Sources of error including the effects of impurities in the oxides are discussed. D0 values in most cases conform to the predictions of Zener for substitutional diffusion.

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Interactions among defects in germanium and silicon have been investigated. The solid solutions involved bear a strong resemblance to aqueous solutions insofar as they represent media for chemical reactions. Such phenomena as acid‐base neutralization, complex ion formation, and ion pairing, all take place. These phenomena, besides being of interest in themselves, are useful in studying the properties of the semiconductors in which they occur. The following article is a blend of theory and experiment, and describes developments in this field during the past few years.

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Studies have been made of the process in which donors are introduced into silicon by heating in the temperature range 300°–500°C and are caused to disappear on heating at higher temperature. This phenomena is shown to depend on the conditions of growth and the heat-treatment history of the crystal. Evidence is summarized which shows that oxygen is the impurity from which the donors are formed. The characteristics of the processes involved are described and possible mechanisms are discussed.