Change of optical band gap and magnetization with Mn concentration in Mn-doped AlN films

Song, Young-Yeal; Quang, Phạm Hồng; Pham, Van-Thai; Lee, Kyu Won; Yu, Seong‐Cho

doi:10.1016/j.jmmm.2004.11.441

Cited by 11 publications

(4 citation statements)

References 10 publications

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“…A number of recent studies have been made on diluted magnetic semiconductors with high values of T c . The important developments that focused attention on wide-bandgap semiconductors are the works on the alloys between group III-nitrides and 3d transition metals, such as Mn-and Cr-doped AlN [19][20][21][22][23][24]. AlN has many useful properties, such as high thermal conductivity, high chemical stability and a low thermal expansion coefficient [1].…”

Section: Introductionmentioning

confidence: 99%

“…Room temperature ferromagnetism has been reported for Cr-doped AlN films grown by using x-ray diffraction [19], reactive magnetron sputtering [21] and molecular beam epitaxy (MBE) [24]. An investigation on the Al 1−x Mn x N films with Mn concentration up to x = 0.136 has been performed by Song et al [22]. It has been reported that the optical band gap decreases exponentially with the increasing of the Mn concentration from x = 0 to 0.136.…”

Section: Introductionmentioning

confidence: 99%

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Different behaviors of half-metallic ferromagnetism of Cr-doped AlN and InN

Kang¹,

Lee²,

Kim³

et al. 2009

Phys. Scr.

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The electronic structure and magnetism are studied for the zinc-blende and wurtzite (Al,Cr)N, (Ga,Cr)N and (In,Cr)N by using the full potential linear muffin-tin orbital method. The energy gap (quasi-gap) in Cr-doped wurtzite InN decreases exponentially with increasing the Cr concentration from 0.027 to 0.166. The half-metallicity is retained in the whole range of concentrations considered, whereas for (Al,Cr)N, the half-metallic character disappears at a concentration of 0.166. The Cr magnetic moment in AlN is about 2.12-2.40µ B Cr atom −1 with changing the Cr concentration, and for Cr in InN, it is a nearly constant value of 3.0 µ B Cr atom −1 .

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Different behaviors of half-metallic ferromagnetism of Cr-doped AlN and InN

Kang¹,

Lee²,

Kim³

et al. 2009

Phys. Scr.

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“…AlN doped with these elements exhibit ferromagnetic behavior above room-temperature, which was shown by theoretical calculations [3] as well as experiments. [4,5] However, experimental results show the formation of secondary phases in the group-III nitride host [6,7], which influence the magnetic properties of the DMS. Therefore, the origin of the ferromagnetic behavior is unclear.…”

Section: Introductionmentioning

confidence: 99%

Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

Ganz¹,

Schaadt²

2011

AIP Conference Proceedings

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“…Recently, it has been reported that nitride semiconductors doped with Mn fabricated by reactive sputtering and molecular beam epitaxy exhibit ferromagnetism, and the Curie temperature is above 300 K for Mn-AlN [7], [8] and 940 K for Mn-GaN [9]. Some groups have suggested that these Mn-doped nitride semiconductors are one of the candidate materials for devices operating above RT.…”

Section: Introductionmentioning

confidence: 99%

Study on Absence of Room-Temperature Ferromagnetism in the Mn-AlN Films With Various Mn Concentrations

et al. 2008

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We have investigated the magnetic behavior and structure of polycrystalline Mn-AlN (Al 1 Mn N) films with various Mn concentrations ( = 0.05-0.24) fabricated by reactive direct current (dc) magnetron sputtering. The magnetic behavior of these films depends on the Mn concentration . The films with = 0 05-0.10 show a paramagnetic behavior at 10-300 K. The film with = 0.17 shows remanent magnetization and coercivity only at 10 K, while that with = 0.24 shows an unknown magnetic behavior. Only würtzite-type AlN phase is observed for below 0.10. The coexistence of a würtzite-type AlN phase and a secondary phase such as Al-Mn alloy, Mn-nitride, or Al-Mn-N ternary compound is observed for = 0.17. The coexistence of a würtzite-type AlN phase and a ThH 2 -type Mn 3 N 2 phase is observed for = 0.24. From these results, it is concluded that the Al 1 Mn N films do not exhibit room-temperature (RT) ferromagnetism for all . Moreover, it is likely that the ferromagnetic behavior observed at 10 K for = 0.17 is caused by the secondary phase.Index Terms-Magnetic semiconductors, Mn-AlN films, paramagnetic behavior, room-temperature (RT) ferromagnetism.

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Change of optical band gap and magnetization with Mn concentration in Mn-doped AlN films

Cited by 11 publications

References 10 publications

Different behaviors of half-metallic ferromagnetism of Cr-doped AlN and InN

Different behaviors of half-metallic ferromagnetism of Cr-doped AlN and InN

Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

Study on Absence of Room-Temperature Ferromagnetism in the Mn-AlN Films With Various Mn Concentrations

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