Challenges to quantitative energy-dispersive X-ray spectrometry and its application to graded embedded silicon–germanium for high-performance complementary metal oxide semiconductor devices

Hübner, René; Engelmann, Hans‐Jürgen; Zschech, Ehrenfried

doi:10.1016/j.tsf.2010.07.104

Cited by 5 publications

(5 citation statements)

References 31 publications

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“…The decrease in the gain with decreasing frequency below 100 kHz was explained by considering the frequency response of the expression in Eq. (2). As the frequency increased, the impedance between the tip and the buried electrode decreased; the amplitude of the gate voltage waveform therefore increased with frequency.…”

Section: Imaging Experiments and Discussionmentioning

confidence: 95%

“…In particular, the semiconductor industry has used a number of measurement techniques to evaluate the physical characteristics of semiconductor devices. Frequently used characterization techniques include scanning electron microscopy (SEM) [1], transmission electron microscopy (TEM) [2], and secondary ion mass spectroscopy (SIMS) [3]. More recently, various scanning probe microscopy (SPM) techniques have become widely used in semiconductor device characterization [4], including electrostatic force microscopy (EFM) and scanning capacitance microscopy (SCM).…”

Section: Introductionmentioning

confidence: 99%

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A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip

et al. 2015

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Section: Imaging Experiments and Discussionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip

et al. 2015

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“…TEM/EDX was used for the spatially resolved quantitative chemical analysis of SiGe structures implemented into high performance complementary metal oxide semiconductor (CMOS) transistors . For rapid and high-quality TEM target specimen preparation, a focused ion beam-based lift-out technique was developed to reduce the postspecimen scatter artifacts during EDX data collection.…”

Section: Electron Probe Microanalysismentioning

confidence: 99%

X-ray Spectrometry

et al. 2011

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I n this Review, we focus on the most significant and essential progress in X-ray spectrometry (XRS) published during the period from January 2010 to August 2011 covering developments and improvements in X-ray optics, X-ray detectors, new quantification models in X-ray spectra and data evaluation, micro-X-ray fluorescence (micro-XRF) including 3D X-ray fluorescence (3D-XRF), elemental imaging techniques, electron probe microanalysis (EPMA), total reflection X-ray fluorescence (TXRF), particle-induced X-ray emission (PIXE) analysis, and X-ray absorption spectrometry (XAS). Herein, we focus on X-ray spectrometry, and thus, X-ray radiography used for only investigating inside structure images and X-ray diffraction (XRD) is not covered. However, we will introduce articles including combinations of these X-ray imaging techniques and other spectroscopic techniques. In addition, different applications in each subfield of XRS, including sample preparation, standard materials, energy-dispersive XRF (ED-XRF), and wavelength-dispersive XRF (WD-XRF), are described. We attempt to look over the current trends in this analytical field by critically citing selected papers to support the research activity of the community of X-ray scientists.Since the previous review on XRS in Analytical Chemistry, an international group of scientists published two overviews on XRS 1,2 in the Journal of Analytical Atomic Spectrometry covering the main fields of XRS analytical spectroscopic methods and instruments. These review articles involve all of the important sections of XRS in nine chapters: reviews, instrumentation, spectrum analysis, matrix correction and calibration, X-ray optics and micro fluorescence, synchrotron radiation (SR), TXRF, portable and mobile X-ray fluorescence (XRF), and online XRF and applications. The section on applications is categorized into geological and industrial minerals, environmental, archeological, cultural heritage, forensic science, etc. These review articles are useful, especially for an overall look at recent XRS research activities.The second edition of the book, "Elements of Modern X-ray Physics", was published. 3 It provides excellent explanations of the basics of X-ray physics, interactions with matter, X-ray sources,

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“…It is well known that electron radiation damage in TEM can significantly change the physical and/or chemical state of the tested sample. [2] Figure 3(a) demonstrates that after an electron fluence of 2.54E+09 nm -2 the Si-K intensity of the sample seems to decrease due to electron radiation damage. Figure 3(b) shows that reducing electron energy can effectively diminish the electron radiation damage on SiGe sample.…”

mentioning

confidence: 99%

Practical Considerations in Quantitative Nanoscale Energy-Dispersive X-ray Spectroscopy (EDX) and Its Application in SiGe

et al. 2015

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Challenges to quantitative energy-dispersive X-ray spectrometry and its application to graded embedded silicon–germanium for high-performance complementary metal oxide semiconductor devices

Cited by 5 publications

References 31 publications

A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip

A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip

X-ray Spectrometry

Practical Considerations in Quantitative Nanoscale Energy-Dispersive X-ray Spectroscopy (EDX) and Its Application in SiGe

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