A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip

Shin, Kumjae; Kang, Dae sil; Lee, Sang hoon; Moon, Wonkyu

doi:10.1016/j.ultramic.2015.07.007

Cited by 11 publications

(15 citation statements)

References 11 publications

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“…Для проведения многих исследований в микроэлектронике, биологии, химии и медицине необходим высокочувствительный неразрушающий анализ пространственного распределения профиля электрического потенциала с высоким пространственным и полевым разрешением. К настоящему времени известны десятки методик сканирующей зондовой микроскопии (СЗМ) для измерения электрических свойств твердотельных или мягких поверхностей [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Электростатическая силовая микроскопия (EFM) и силовая микроскопия зонда Кельвина (KFM) основаны на эффекте электростатического взаимодействия между смещенным зондом и образцом для расчета количественного значения электрического потенциала.…”

Section: Introductionunclassified

“…Сканирующая емкостная микроскопия использует только электрические измерения [3,4] и имеет тот же уровень разрешения. Также имеются работы [5][6][7][8][9][10][11], в которых на вершине зонда СЗМ были изготовлены активные датчики: резистивный датчик [5], полевые транзисторы [6][7][8], одноэлектронные транзисторы [9-10] и наноэлектромеханические устройства [11]. Перспективным кандидатом на использование локального датчика или датчика для СЗМ является полевой транзистор, у которого канал−нанопровод модифицирован специальными молекулами-ключами.…”

Section: Introductionunclassified

“…Полевые транзисторы работают в широком диапазоне температур от миликельвин до комнатной температуры. Чувствительность к заряду сканирующего устройства на основе полевого транзистора при комнатной температуре начинается с 100 электронов [26] и в настоящее время достигает уже десятков электронов [7,8,27]. Теоретически чувствительность к заряду полевого транзистора с каналом-нанопроводом на несколько порядков меньше, чем заряд одиночного электрона [28,29].…”

Section: Introductionunclassified

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Особенности Измерения Поверхностного Распределения Электрического Потенциала Локальным Зондом На Основе Полевого Транзистора С Каналом-Нанопроводом

Божьев¹,

Крупенин²,

Преснов³

et al. 2020

Журнал Технической Физики

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The non-destructive method of scanning probe microscopy for simultaneous measurement of surface topography and distribution of the electric field (charge, potential) is demonstrated. The surface is scanned by the tuning fork method, the interaction with the surface is carried out by the sharp edge of the silicon chip mounted on one of the legs of the quartz resonator. The detection of electric potentials was carried out using a field-effect transistor with a nanowire channel formed at the tip of the probe. Due to the low quality factor of the oscillatory system, scanning by standard algorithms of probe movement above the surface led to rapid wear and even destruction of the tip of the probe. An original scanning algorithm was developed that minimizes the interaction time between the probe and the object under study. The minimum time at each scanning surface point was 1.0-1.6 ms - this time was determined by the response time of the field-effect transistor to a change in the detected electric field (the measurement time for one scan was 20-30 min). The spatial resolution of the method was 10 nm and 20 nm for measuring the topography and field profile of the sample, respectively. The field resolution of the fabricated chips was in the range of 2-5 mV and was determined by the sensitivity of the nanowire of the field effect transistor and the distance from the nanowire to the tip of the probe.

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Section: Introductionunclassified

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Особенности Измерения Поверхностного Распределения Электрического Потенциала Локальным Зондом На Основе Полевого Транзистора С Каналом-Нанопроводом

Божьев¹,

Крупенин²,

Преснов³

et al. 2020

Журнал Технической Физики

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“…There are a number of high-resolution scanning probe microscope (SPM) techniques for mapping the electrical properties of condensed or soft surfaces [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM) are based on the effect of the electrostatic interaction between a biased probe and the sample for calculating a quantitative value of the electric potential.…”

Section: Introductionmentioning

confidence: 99%

“…Scanning capacitance microscopy uses electrical measurements only [3][4] and has the same level of resolution. Also there are works [5][6][7][8][9][10][11][12] where active electrical sensors were fabricated on the SPM probe apex for studying the electrical properties of the sample independently from its topography measurements. These sensors include resistive probe [5], field-effect transistors (FETs) made using CMOS-compatible [8][9] or ion milling techniques [6][7], single-electron transistors [10][11], NEMS device [12].…”

Section: Introductionmentioning

confidence: 99%

Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor

et al. 2017

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We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10e/Hz at room temperature.

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Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

Presnov

Bozhev

Miakonkikh

et al. 2018

Journal of Applied Physics

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We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (∼100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1–0.2 e/Hz from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

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A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip

Cited by 11 publications

References 11 publications

Особенности Измерения Поверхностного Распределения Электрического Потенциала Локальным Зондом На Основе Полевого Транзистора С Каналом-Нанопроводом

Особенности Измерения Поверхностного Распределения Электрического Потенциала Локальным Зондом На Основе Полевого Транзистора С Каналом-Нанопроводом

Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

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