Challenges of back end of the line for sub 65 nm generation

Fayolle, M.; Passemard, G.; Louveau, O.; Fusalba, Florence; Cluzel, J.

doi:10.1016/s0167-9317(03)00467-2

Cited by 52 publications

(31 citation statements)

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“…18 The hard masks provide precise alignment and great chemical selectivity in defining nanoscale patterns on the ILD. However, because the ILD and the deposited TiN have very different structural and mechanical properties, there is a residual stress accumulated in the TiN hard mask which can generate high compressive stresses in the patterned structures.…”

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confidence: 99%

Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning

et al. 2015

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Commonly known in macroscale mechanics, buckling phenomena are now also encountered in the nanoscale world as revealed in today's cutting-edge fabrication of microelectronics. The description of nanoscale buckling requires precise dimensional and elastic moduli measurements, as well as a thorough understanding of the relationships between stresses in the system and the ensuing morphologies. Here, we analyze quantitatively the buckling mechanics of organosilicate fins that are capped with hard masks in the process of lithographic formation of deep interconnects. We propose an analytical model that quantitatively describes the morphologies of the buckled fins generated by residual stresses in the hard mask. Using measurements of mechanical properties and geometric characteristics, we have verified the predictions of the analytical model for structures with various degrees of buckling, thus putting forth a framework for guiding the design of future nanoscale interconnect architectures.

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confidence: 99%

Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning

et al. 2015

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“…It is known that the large surface-to-volume ratio of sensing area is beneficial for the adsorption of hydrogen gas, thus enhancing the sensing response. However, the porous metal film may pose the problems regarding the long-term reliability [13]. Therefore, dense Pd metal film is preferred, especially for those semiconductor device-based hydrogen sensors.…”

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confidence: 99%

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsai

Chen

Lin

et al. 2010

Microelectronics Reliability

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“…In order to continue the progression to smaller dimensions and higher performance, many different challenges relating to interconnect processing must be solved [2]. For example, as the pitch decreases and the aspect ratio (depth to width) increases, it is difficult to fill damascene trenches with copper without voids.…”

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confidence: 99%

“…Key-hole formation within the damascene structures compromises the reliability of the interconnects [3]. Furthermore, the chemical mechanical polishing (CMP) processes used to remove excess copper after electroplating have encountered great challenges especially with the integration of ultralow-k dielectrics [2]. Minimizing or even eliminating copper CMP would be highly desirable from a process integration point of view.…”

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Selective Filling and Sintering of Copper Nanoclusters for Interconnect

Tee

Lassesson

Lith

et al. 2007

IEEE Trans. Nanotechnology

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Abstract-In copper interconnect technology, dielectric trenches are patterned, filled with copper, and polished. We report a cluster-based deposition technology that provides efficient trench filling and excellent selectivity between trenches and plateaus on damascene structures. The selectivity arises due to the propensity for reflection of clusters from the planar surfaces between trenches. Trenches of sub-200 nm widths, with various diffusion barriers and seed layers, and up to 5 : 1 aspect ratios have been completely filled with copper clusters. We also show that copper clusters can be sintered into a seed layer using hydrogen annealing. Thus, dense copper films within trenches are obtained. Preliminary results from planar samples show that the resistivity is around 2.3 10 8 m

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Challenges of back end of the line for sub 65 nm generation

Cited by 52 publications

References 0 publications

Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning

Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Selective Filling and Sintering of Copper Nanoclusters for Interconnect

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