2015
DOI: 10.1021/acs.nanolett.5b00685
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Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning

Abstract: Commonly known in macroscale mechanics, buckling phenomena are now also encountered in the nanoscale world as revealed in today's cutting-edge fabrication of microelectronics. The description of nanoscale buckling requires precise dimensional and elastic moduli measurements, as well as a thorough understanding of the relationships between stresses in the system and the ensuing morphologies. Here, we analyze quantitatively the buckling mechanics of organosilicate fins that are capped with hard masks in the proc… Show more

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Cited by 15 publications
(27 citation statements)
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“…The ILD samples were used in a similar study 16 and correspond to samples C, A, and B therein. Each sample had different dimensions or materials and different buckling characteristics.…”
Section: Materials and Microscopymentioning
confidence: 99%
See 4 more Smart Citations
“…The ILD samples were used in a similar study 16 and correspond to samples C, A, and B therein. Each sample had different dimensions or materials and different buckling characteristics.…”
Section: Materials and Microscopymentioning
confidence: 99%
“…1(a)) consisted of five layers. 16 From bottom to top: Layer 1 was a 300 mm diameter (100) Si wafer. Layer 2, 100 nm SiO 2 , was deposited by chemical vapor deposition (CVD) directly on the Si wafer.…”
Section: Materials and Microscopymentioning
confidence: 99%
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