Cellular structure and silicide formation in laser-irradiated metal-silicon systems

Abstract

Laser irradiation of thin Co, Mo, and Pd films on single-crystalline silicon using Q-switched Nd-YAG laser pulses was shown by He backscattering to result in deep metal penetration into the Si. Evidence of the silicide formation was obtained by x-ray diffraction. Transmission electron microscopy showed the simultaneous occurrence of two types of cells with metal-rich walls: small cells of about 0.1-μm diameter, attributed to rapid solidification from a supercooled melt, and larger cells of about 1-μm diameter, attributed to convection in the melt (Bénard cells).

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

“…22 This has been observed in Si supersaturated with transition metals using PLM of ion-implanted 10 and metal filmcoated Si. 23 Thermal annealing at 400 C resulted in dramatic changes to the Raman spectra of the thicker Au-film samples. In general, annealing tends to restore the intensity, the peak position, the width (FWHM) and the symmetry of the zonecenter phonon peak.…”

Single‐Phase Filamentary Cellular Breakdown Via Laser‐Induced Solute Segregation

“…[4] . Co ions are not degenerate with any Si isotopes, and for relevance to both the older literature and recent published results [1,44] . Pulsed laser melting was performed using a 308 For APT analysis, samples must be mounted on a conductive post and shaped and sharpened into conical needles of < 100 nm tip radius.…”

Reflections on the ‘Tears of wine’ phenomena in materials

“…In an interesting set of experiments in laserirradiated semiconductors, van Gurp and his collaborators 5 deposited, from the vapour phase, thin films of cobalt and other metals on to silicon wafers. Following laser beam irradiation and melting of a thin layer of silicon plus the surface film, a cellular formation was observed with cell size comparable with the thickness of the molten layer.…”