CBC8: A 0.25 &amp;#x00B5;m SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design

Babcock, J.A.; Cestra, Greg; Noort, Wibo van; Allard, P.; Ruby, Scott; Tao, J.; Malone, R.; Buchholz, Alan; Lavrovskaya, N.; Yindeepol, W.; Printy, Craig; Ramdani, J.; Labonte, Andre; McCulloh, H.; Leng, Y.; McCarthy, P. J.; Getchell, Don; Sehgal, Akshey; Krakowski, Tracey; Desai, S.; Joyce, Chris; Hojabri, Peyman; Decoutere, Stefaan

doi:10.1109/bipol.2010.5667971

Cited by 17 publications

(6 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SiGe-npn and SiGe-pnp transistors were fabricated with a production CBiCMOS flow as described in [5]. Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Utilization of silicon-on-insulator (SOI) with shallow and deep trench isolation [4], [5], has tended to be the preferred direction for the most advanced precision analog applications due to improved cross-talk noise immunity, elimination of latch-up, and improved radiation tolerance. However, self-heating in SOI (due to the high thermal resistance of the buried oxide), has been a concern that can potentially limit high-current density device performance compared to bulk silicon devices.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Babcock

Choi

Sadovnikov

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

Self Cite

View full text Add to dashboard Cite

We present a comprehensive investigation of temperature dependence of breakdown voltage, DC current gain (ȕ), and Early voltage (V A ) for complementary SiGe-npn and SiGe-pnp bipolar transistors fabricated on an advanced CBiCMOS technology on thick-film SOI.Both SiGe-npn and SiGe-pnp transistors show decreasing V A as ambient operating temperature increases from -60ºC to +200ºC for low collector current densities (J C 5.0 μA/μm 2 ) with a near linear inverse temperature (1/T) relationship. We also demonstrate in the region historically defined by weak self-heating interactions that V A maintains minimal sensitivity to operating temperature.

show abstract

“…SiGe-npn and SiGe-pnp transistors were fabricated with a production CBiCMOS flow as described in [5]. Fig.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Babcock

Choi

Sadovnikov

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The transistors investigated are npn and pnp SiGe HBTs on thickfilm SOI, with matched electrical performance [8]. Two variants of npn SiGe HBTs -a low breakdown (LVNPN) and a high breakdown (HVNPN) version -and a high breakdown pnp SiGe HBT (HVPNP) are investigated.…”

Section: A Technology Descriptionmentioning

confidence: 99%

A large-signal RF reliability study of complementary SiGe HBTs on SOI intended for use in wireless applications

Seth

Thrivikraman

Cheng

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

Self Cite

View full text Add to dashboard Cite

For the first time, a large-signal RF stress study of complementary (npn + pnp) SiGe HBTs on thick-film SOI is performed, and analyses based on device physics are presented, shedding light on the observed failure mechanisms of these C-SiGe HBTs at very high RF input power. Two types of npn SiGe HBTs, low-breakdown voltage (LVNPN) and high-breakdown voltage (HVNPN) devices, as well as a high-breakdown voltage pnp SiGe HBT (HVPNP) in a 250 nm C-SiGe on SOI process are investigated. It is shown that the HVPNP can withstand aggressive RF stress for longer periods of time, compared with the LVNPN and the HVNPN, which succumb to several interesting modes of catastrophic device failure. A case is made for the use of pnp SiGe HBTs in sensitive RF front-ends that may be exposed to non-limited high RF power due to leakages in the transmit/receive (T/R) path or RF reflections.

show abstract

“…C-SiGe represents the leading-edge in high-performance analog/mixedsignal design platforms, offering very low power, high speed, efficient push-pull driver stages, and improved bias references [1]. Recent studies [2], [3] on such C-SiGe platforms have shown that the pnp SiGe HBTs have superior RF performance over their npn counterparts in terms of power gain and RF linearity, opening up a realm of interesting design possibilities in high-linearity analog/RF circuit design.…”

Section: Introductionmentioning

confidence: 99%

A comparison of intermodulation distortion performance of HICUM and VBIC compact models for pnp SiGe HBTs on SOI

Seth

Cressler

Babcock

et al. 2012

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Self Cite

View full text Add to dashboard Cite

This paper presents the characterization of intermodulation distortion in pnp SiGe HBTs on SOI. For the first time, measured results of pnp SiGe HBTs are compared against Spectre-based simulations using both HICUM and VBIC compact models, after the systematic selection of the appropriate corner models. It is shown that the HICUM model more accurately captures distortion effects than the VBIC model, across a wide range of collector voltages and currents. HICUM is also superior in modeling large-signal nonlinearities such as gain-compression. These results have clear implications for the best-practice design of distortion-sensitive high-frequency SiGe analog and RF circuits.

show abstract

CBC8: A 0.25 µm SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design

Cited by 17 publications

References 7 publications

Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

A large-signal RF reliability study of complementary SiGe HBTs on SOI intended for use in wireless applications

A comparison of intermodulation distortion performance of HICUM and VBIC compact models for pnp SiGe HBTs on SOI

Contact Info

Product

Resources

About