Cavity-Through Deep Reactive Ion Etching of Directly-Bonded Silicon Wafers

Kang, Purum; Tanaka, Shinya; Esashi, M.

doi:10.1109/sensor.2007.4300189

Cited by 4 publications

(5 citation statements)

References 7 publications

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“…This phenomenon indicates that the activation effect is weakened under afterward DI water treatment. Finally, the modified surface after rinsing in DI water is mainly terminated by hydroxyl groups 14 and is ready for hydrophilic wafer bonding.…”

Section: Discussionmentioning

confidence: 99%

Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

Chen

Liu

et al. 2009

J. Electrochem. Soc.

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Plasma activation has been investigated for its ability to induce a strong bonding energy even at low-temperature annealing. In this paper, Ge, Si, and SiO2 surface hydrophilicities with oxygen and nitrogen plasma activation are analyzed by contact angle measurement. Compared to wet chemical treatments, such as solutions containing ammonium hydroxide, the hydrophilicity of Ge wafer surface is strongly enhanced by normalO2 or normalN2 plasma activation. For germanium, a highly hydrophilic and smooth surface has been obtained by normalO2 plasma activation only for 10 s. The contact angle measurements indicate that normalO2 plasma is more remarkable than normalN2 plasma in the same activation conditions. A higher surface roughness, which is only observed in the normalO2 plasma activated sample, is decreased greatly after rinsing in deionized water.

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Section: Discussionmentioning

confidence: 99%

Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

Chen

Liu

et al. 2009

J. Electrochem. Soc.

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“…Next, photolithography is conducted to make the resist pattern on the top. The three Si substrates separated by cavities are etched using the deep-RIE based on Bosch process, which is named ''cavity-through etching'', 25) and the micro-Einzel lens array is completed. The details of the experimental results will be presented and discussed next.…”

Section: Fabricationmentioning

confidence: 99%

Fabrication of Einzel Lens Array with One-Mask Reactive Ion Etching Process for Electron Micro-Optics

Miyashita

Tomono

Kawai

et al. 2011

Jpn. J. Appl. Phys.

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Strong perpendicular magnetocrystalline anisotropy (MCA) and low saturation magnetization are found in DO 22 Mn 3 Ga using the full-potential linearized augmented plane wave (FLAPW) method. The ferrimagnetism in the bulk is well preserved in the surfaces of Mn 3 Ga for two possible terminations, where the perpendicular MCA in the (001) direction is greatly enhanced over the bulk, consistent with experiments. Furthermore, the robustness of MCA with respect to lattice strain and a good lattice match with popular substrates suggest that Mn 3 Ga can be a good candidate for strain-resistance spintronics applications.

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“…3 The silicon wafer pairs, annealed at 350°C for 20 h, are picked out for the test. After that, the samples are detected in the infrared system.…”

Section: Effect Of Annealing On Silicon Direct Bondingmentioning

confidence: 99%

“…It enables the integration of semiconductor materials such as silicon-on-insulator [2,3] and realization of 3D structure assembly and micro-electro-mechanicalsystems packaging [4]. Owing to its various applications and the simple technical process, silicon direct bonding has been paid much attention to and applied successfully [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet exposure enhanced silicon direct bonding

Liao

Zhang

Lin

et al. 2009

Front. Mech. Eng. China

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Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers' nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding.

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Cavity-Through Deep Reactive Ion Etching of Directly-Bonded Silicon Wafers

Cited by 4 publications

References 7 publications

Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

Fabrication of Einzel Lens Array with One-Mask Reactive Ion Etching Process for Electron Micro-Optics

Ultraviolet exposure enhanced silicon direct bonding

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