Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

Ma, Xiang; Chen, Chao; Liu, Weili; Liu, Xuyan; Du, Xiaofeng; Song, Zhanqian; Lin, Chenglu

doi:10.1149/1.3089363

Cited by 25 publications

(25 citation statements)

References 15 publications

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“…The original wafer's rms roughness was found to be 202.577 ± 3.250 pm; however, on 30-s plasma exposure, the rms surface roughness value improved to 186.668 ± 5.885 pm. The corresponding rms value obtained from the AFM analysis shows that the surface morphology of SiO 2 /Si treated with N 2 -plasma appears to have no signifi cant changes (only about 20 pm), which agrees well with the fi ndings of Ma et al [ 31 ] It is worth noting that the surfaces treated with plasma should be used for LB deposition immediately because they may recover their untreated surface characteristics with prolonged exposure to air. To determine the optimal process conditions and surface chemical composition changes upon storage after plasma treatment, contact angle measurements as a function of aging time were obtained for the N 2 -plasma-treated substrates with water droplets.…”

Section: Resultssupporting

confidence: 88%

“…It is well known that upon exposure to N 2 -plasma, the surface properties of Si or SiO 2 can be modifi ed. [ 14,15 ] Commercially available templates are used to mask a SiO 2 /Si substrate, and exposure to low-power N 2 -plasma is carried out to enhance hydrophilicity in specifi c areas and promote adhesion of GO sheets to the substrate during LB deposition. An assortment of geometric patterns was created by selectively tailoring the hydrophilicity of the SiO 2 /Si substrate via masking and N 2 -plasma exposure.…”

Section: Introductionmentioning

confidence: 99%

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N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

Chauhan

Palaninathan

Raveendran

et al. 2015

Adv Materials Inter

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building block for the next generation of micro-and nanoscale electronic devices. Signifi cant progress has been made in the area from its synthesis to applications; [ 3 ] however, from the industrial point of view, a grand challenge still exists in its selective placement, self-assembly, and patterning, which would enable a variety of large-area electronics that could be applied in a variety of technologically advanced areas, including the fi elds of electronics, photonics, optoelectronic devices, biological and chemical sensing, and energy conversion. It is extremely desirable to develop a technique for the successful selective placement and patterning of graphene for a low-cost and high-throughput fabrication of large-area 2D patterned graphene and graphene oxide (GO), in which the dimensions are controllable. To date, extensive work has been devoted to the self-assembly and patterning of GO and graphene using various techniques, including electron beam lithography, photolithography, scanning probe lithography, block-copolymer lithography, soft transfer printing, masked laser patterning, direct laser patterning, a combination of wettability modulation and spin-coating, and ink-jet printing. [ 4 ] Complex patterned structures can be formed using the current lithography techniques; but during this process the residual polymers may contaminate the graphene surface and interfere with subsequent metallization steps. Apart from that, these processes are time-consuming and involve highly expensive and sophisticated equipment with low throughput; hence, there is an urgent need for a simple, time-saving and cost-effective method that can yield high throughput with greater reproducibility for the effi cient fabrication of 2D patterned graphene and various nanostructures over a large area.Additionally, another important issue, yet to be resolved, is how to achieve precise control over the alignment and positioning of graphene sheets from the stock solution on to the substrate; this is one of the vital steps in the processing of graphene-based devices, especially for the large-scale fabrication of parallel device arrays, [ 5 ] which are highly desirable for commercial applications.Precise control of the placement and patterning of graphene on various substrates has tremendous impact in many fi elds, such as nanoscale electronics, multifunctional optoelectronic devices, and molecular sensing. A one-step facile technique involving N 2 -plasma promotes surface modifi cation and enhances the surface wettability of the substrate. The technique is employed to create partially hydrophilic surfaces on SiO 2 /Si substrate with the aid of various templates, enabling the selective deposition, alignment, and formation of patterns comprising monolayer graphene oxide (GO) sheets; it successfully uses the Langmuir-Blodgett (LB) deposition technique over a large area without the need of any sophisticated equipment. Various characterization techniques are carried out in order to understand the possible mechanism behind the pinning of th...

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

Chauhan

Palaninathan

Raveendran

et al. 2015

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…The nitrogen radical exposed Ge also shows a significant GeO 2 formation; this is similar to previous studies where Ge exposed to nitrogen plasma resulted in a more hydrophilic surface signifying formation of an oxide. 13 These quantifiable XPS data were used to estimate the film thickness as 0.39, 0.58, and 0.72 nm for the reference, nitrogen radical activated and oxygen radical activated samples, respectively. 8 Most extensive hydroxylation, which is indicated in the first column of Table I, was observed for the reference samples.…”

Section: Applied Physics Letters 96 102110 ͑2010͒mentioning

confidence: 99%

Low temperature germanium to silicon direct wafer bonding using free radical exposure

Byun

Ferain

Fleming

et al. 2010

Applied Physics Letters

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A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3360201

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“…2b). The change took place because of the surface etching effect of plasma, which has already been discussed in many former researches [9][10][11][12]. As shown in Fig.…”

Section: X-ray Photoelectron Spectroscopy (Xps)mentioning

confidence: 86%

A Chromium Discharge Minimizing Tanning Technology Assisted by O2 Low Temperature Plasma

Liu¹,

Su²,

Xu³

et al. 2017

dtetr

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Abstract. Substantial quantities of solid and liquid wastes generate in the chrome tanning process, posing major environmental problem if not managed effectively. In order to minimize the emissions of chromium, a high exhaustion chromium tanning method was designed in this study. Low temperature plasma (LTP) technology has the characteristics of economy, pollution-free and high efficiency. The pioneering works were carried out by applying LTP to surface modification of natural leather before tanning process. The effects of different treatment time on micro-structure, chemical compositions, active groups, tanning absorption rate of leather fiber were studied. The SEM results showed that the leather surface was etched rougher. The XPS data showed that the O1s area ratios increased from 18.8 % to 27.6 % after O2 LTP treatment. The optimal O2 plasma treatment time is 10min. The results show O2 LTP treatment effectively improves the chrome tanning absorption rate from 78.68 % of conventional process to 94.47 % of the novel process, which reduces the emission of heavy metal chromium and protects the environment.

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Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

Cited by 25 publications

References 15 publications

N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

Low temperature germanium to silicon direct wafer bonding using free radical exposure

A Chromium Discharge Minimizing Tanning Technology Assisted by O2 Low Temperature Plasma

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Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

Cited by 25 publications

References 15 publications

N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique

N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique

Low temperature germanium to silicon direct wafer bonding using free radical exposure

A Chromium Discharge Minimizing Tanning Technology Assisted by O2 Low Temperature Plasma

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Product

Resources

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N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique