Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

Tsai, Wen-Jer; Gu, S.H.; Zous, N.K.; Yeh, Chih-Ting; Liu, C.C.; Chen, C.H.; Wang, Tahui; Pan, S.C.; Lu, Chih‐Yuan

doi:10.1109/relphy.2002.996607

Cited by 35 publications

(19 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…33 The results showed good improvements in charge storage capacity due to the increase in particle density. 42,43 The latter are vulnerable to heavy charge leakage through the tunnel oxide that almost leaves the floating gate empty. In an attempt to address the screening effect, particle density multiplication performed by increasing the density of the BCP templates as an alternative to building layer-by-layer assemblies not only allowed increasing the particle density laterally, but also prevented the undesirable addition to the height of the device structure.…”

Section: C Capacitance-voltage (C-v) and Capacitance-time (C-t) Chmentioning

confidence: 99%

Gold nanoparticle density-multiplication by tuning block copolymer self-assembly processes toward increased charge storage

et al. 2015

View full text Add to dashboard Cite

We describe a simple and versatile approach for enhanced nanoparticle density multiplication through the block copolymer self-assembly technique for application in memory devices. Templates of block copolymers with functional groups directed the selective electrostatic self-assembly of the pre-formed gold nanoparticles to form gold nanocluster arrays. By simply increasing the density of the polymer templates by manipulating the spin coating conditions, a lateral increase in the nanoparticle density is observed. The significance of the particle density multiplication was best observed when they were used as charge storage centers in flash memories. Minimization of the pitch (or maximization of the template density) resulted in a maximum memory window of about 1.63 V, with a charge trap state density of 4.93 Â 10 11 cm À2 in the gold nanocluster arrays. The reported approach offers exciting opportunities to fabricate multicomponent nanostructure-based memory devices tailored for enhanced memory performance. In addition, the nanoparticle density can be increased significantly further when combined systematically with the hierarchical block copolymer self-assembly approach.

show abstract

Section: C Capacitance-voltage (C-v) and Capacitance-time (C-t) Chmentioning

confidence: 99%

Gold nanoparticle density-multiplication by tuning block copolymer self-assembly processes toward increased charge storage

et al. 2015

View full text Add to dashboard Cite

show abstract

“…The threshold-voltage shift can be due to the lateral motion of charge and electron-hole recombination inside the nitride [6] or due to the vertical loss through the bottom oxide [7], [8]. Recently, a new model was proposed, explaining the threshold-voltage loss by the annealing of the interface traps during retention [9].…”

Section: Endurance and Retentionmentioning

confidence: 99%

New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories

Furnemont

Rosmeulen

Zanden

et al. 2007

IEEE Electron Device Lett.

View full text Add to dashboard Cite

A new operating mode for the nitride-based nonvolatile memory cells using channel hot electron injection for programming and hot hole injection for erasing is presented. The mismatch between the injected electron and hole profiles during programming and erasing operations, which limits the performance of the device, can be prevented. The profiles, extracted from charge-pumping measurements, are tuned by changing the operating voltages in order to have matched distributions. Substantial improvements in endurance and subsequent high-temperature data retention are demonstrated.

show abstract

“…Identifying spatial/energetic trap distribution in the charge trapping, tunneling, and/or blocking dielectric layer is key to understand the non-volatile memory device reliability performance such as retention, endurance, and disturb [2][3][4]. The number of electrons stored (or trapped) in a memory device decreases dramatically with scaling-down, and only a few hundreds of electrons are trapped in a device below the 32 nm node [5,6].…”

Section: Introductionmentioning

confidence: 99%

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Cho

Degraeve

Roussel

et al. 2010

Solid-State Electronics

View full text Add to dashboard Cite

Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

Cited by 35 publications

References 6 publications

Gold nanoparticle density-multiplication by tuning block copolymer self-assembly processes toward increased charge storage

Gold nanoparticle density-multiplication by tuning block copolymer self-assembly processes toward increased charge storage

New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Contact Info

Product

Resources

About