Cathodoluminescence study of GaN epitaxial layers

Cremades, Ana; Piqueras, J.; Xavier, C.; Monteiro, T.; Pereira, E.; Meyer, B. K.; Hofmann, D. M.; Fischer, Stefan

doi:10.1016/s0921-5107(96)01712-6

Cited by 27 publications

(8 citation statements)

References 9 publications

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“…The nature of the centres related to both bands has been investigated by many authors. In particular the 430 nm band, which has not been so extensively reported as the yellow emission, has been related to point defects or impurities decorating dislocations [7] but its exact origin is still unknown. The origin of the yellow band is also still a subject of controversy.…”

Section: Discussionmentioning

confidence: 99%

“…In fact efficient GaN-based LEDs can be made with dislocation densities in the range of 10 10 cm −2 . Dislocations, or point defects which nucleate at the dislocations, have been related to the yellow emission of GaN but the exact nature of the centres responsible for this band has not been yet determined [7][8][9][10][11][12][13]. Previous work on the influence of dislocations on the luminescence of GaN refers to dislocations generated during film growth.…”

Section: Introductionmentioning

confidence: 99%

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Influence of deformation on the luminescence of GaN epitaxial films

Herrera

Fernández

Piqueras

1998

Semicond. Sci. Technol.

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The effect of indentation on the cathodoluminescence (CL) of GaN:Si epitaxial films has been investigated in the scanning electron microscope. Deformation produces changes in the defect structure which are monitored through the changes induced in the cathodoluminescent emission. Besides a general quenching of the luminescence, an increase of the relative intensity of the deep level bands is observed. The effect of different annealing treatments on the CL emission has been investigated.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of deformation on the luminescence of GaN epitaxial films

Herrera

Fernández

Piqueras

1998

Semicond. Sci. Technol.

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“…1 A second broad band centered at 2.9 eV ͑blue band͒ is often observed in cathodoluminescence ͑CL͒ and photoluminescence ͑PL͒ spectrum of undoped ͑nominally n-type͒ and Sidoped GaN. [2][3][4][5][6][7][8][9] The 2.9 eV band was attributed to point defects, which are either relatively homogeneously distributed 2 or concentrated in the hillocks. 3 Variation of the CL intensity with time was observed by Toth et al and attributed to electromigration of H and O atoms, as well as to competition between different recombination channels.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

Reshchikov

Shahedipour

Korotkov

et al. 2000

Journal of Applied Physics

109

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The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found.

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“…This property of the yellow PL is very puzzling and is not yet understood. It was suggested that the yellow PL is either directly or indirectly related to dislocations, or is enhanced in the regions of large density of dislocations, since impurities participating in this PL are also implicated in the decoration of dislocations [5][6][7]. The red PL shows a similar property.…”

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confidence: 99%

Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaN

et al. 1998

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The origin of two "deep" photoluminescence (PL) emissions observed in wurtzite (yellow PL) and cubic (red PL) GaN is discussed. PL and time-resolved PL studies confirm donor-acceptor pair character of the yellow band in wurtzite GaN and point to participation of shallow donors in this emission. A similar PL mechanism is proposed for the red emission of cubic GaN. We further show a puzzling property of both yellow and red PLs. Both yellow and red emissions show spatial homogeneity and are only weakly dependent on surface morphology.PACS numbers: 61.16.Ch, 61.72.Ff, 71.55.ΕqThe characteristic property of bulk samples and epilayers of GaN is the presence of yellow photoluminescence (PL) emission band with the maximum at about 2.2 eV. The origin of this PL, which is observed in practically all samples of wurtzite structure, grown by different techniques [1], is still disputed. Two conflicting models were proposed to explain the yellow PL [1-3] within the framework of the donor-acceptor pair (DAP) recombination mechanism. The yellow PL has been related to either DAP recombination of shallow donors and deep acceptors [1, 2], or to a deep donor-shallow acceptor related DAP process [3]. Recently, a successful growth of cubic phase GaN epilayers was achieved [1]. In addition to excitonic edge emissions, these epilayers show red PL, with the maximum at about 2 eV. The origin of this PL remains unknown.

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Cathodoluminescence study of GaN epitaxial layers

Cited by 27 publications

References 9 publications

Influence of deformation on the luminescence of GaN epitaxial films

Influence of deformation on the luminescence of GaN epitaxial films

Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaN

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