Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations

Fitting, H.‐J.; Barfels, T.; Trukhin, A.N.; Schmidt, Bernd; Guļāns, Andris; Czarnowski, A. von

doi:10.1016/s0022-3093(02)00952-3

Cited by 97 publications

(159 citation statements)

References 27 publications

Supporting

Mentioning

132

Contrasting

Unclassified

Order By: Relevance

“…These same spectral features are also observed in CL from unimplanted SiO 2 (also shown in Fig. 1), an observation made also by other groups 11 . For our samples the red peak intensity is not affected by implantation but the blue peak increases in intensity reflecting the increase in ODCs as a result of the excess Si in the SiO 2 .…”

Section: Spectrasupporting

confidence: 86%

“…Relatively high beam energies are typically used (> 8 keV) because sample preparation generally results in surface damage causing a dead (nonluminescent) layer. The main luminescent centres emitting in the visible region are two-fold coordinated Si with a blue peak at 2.7 eV and the non-bridging oxygen hole centre with a red peak at 1.85 eV 11 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Cathodoluminescence as a method of extracting detailed information from nanophotonic systems: a study of silicon nanocrystals

et al. 2005

View full text Add to dashboard Cite

We investigated Si nanocrystal samples produced by high dose 600 keV Si + implantation of fused silica and annealing using cathodoluminescence (CL). CL spectra collected under 5-25 keV electron irradiation show similar features to reported photoluminescence spectra, including the strong near IR peak. The CL intensity distribution is formulated as a linear inverse problem and two methods namely the regularisation method and maximum entropy method can be applied to determine the depth profile without making any assumptions concerning the profile function, i.e. a free form solution. We show using simulated CL data that the maximum entropy method is the most appropriate as it preserves the positivity and additivity of the depth profile. This method is applied to experimental CL data and we have localised the spatial origin of the near IR emission to the near-surface region of the implant, 400 nm from the surface, containing the smallest Si nanocrystals.

show abstract

Section: Spectrasupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence as a method of extracting detailed information from nanophotonic systems: a study of silicon nanocrystals

et al. 2005

View full text Add to dashboard Cite

show abstract

“…Experimental details of the sample preparation had been given already in Ref. [9]. Finally, the samples were investigated by integral and time-resolved photoluminescence (PL) and optically stimulated electron emission (OSEE).…”

Section: Samples Under Studymentioning

confidence: 99%

Photosensitive defects in silica layers implanted with germanium ions

Zatsepin¹,

Fitting²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

a b s t r a c tGe-implanted silica layers have been investigated by high-power pulsed synchrotron-photoluminescence (PL), photoluminescence excitation spectroscopy (PLE), and optically stimulated electron emission (OSEE) with respect to association of excitation and absorption bands to respective emission bands and lifetimes of excited defect states. In this way singlet-singlet (4.35 eV) and triplet-singlet (3.18 eV) radiative transitions from excited states of oxygen-deficient centers (ODC) in Ge-doped silica glass are characterized by their absorption and emission bands as well as their lifetimes. The main channel for non-radiative relaxation of photoexcitation is electron emission by the OSEE effect. The OSEE shows non-radiative transitions of surface E 0 s and bulk E 0 -centers found with concentrations of (2.7-3.4) Â 10 12 cm À2 and (2-4) Â 10 16 cm À3, respectively.

show abstract

“…This implantation energy and dose led to an atomic dopant fraction of about 4 at.% at nearly the half depth of the oxide layers. The implantation and depth profiling processes were described in details elsewhere [9,11]. A post-implantation thermal annealing was performed at temperature T a = 900°C for 1 h in dry nitrogen.…”

Section: Objects and Experimental Proceduresmentioning

confidence: 99%

“…Steady-state cathodoluminescence properties of such layers were studied in [9,10]. The present study is concerned with radiative relaxation processes involving photosensitive defects and nanoclusters in SiO 2 films implanted with Si + ions.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved photoluminescence of implanted SiO2:Si+ films

Zatsepin¹,

Пустоваров²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

a b s t r a c tIn this paper we present results of a low-temperature time-resolved photoluminescence (PL) investigation of thin SiO 2 films implanted with silicon ions. In addition to the luminescence of well-known ODCs, some other bands are present in the low-energy region of PL spectra that are attributed to silicon nanoclusters (quantum dots -SiQDs), excitons and hydrogen-related species (HRS). Specific features of SiQD and HRS bands are the nanosecond kinetics and unusual ''stepped" PL excitation spectrum in the 3.5-7.5 eV range. The possible origin of discovered phenomena is discussed. The obtained results are interpreted taking into account the interference of exciting radiation and dimensional quantization effects.

show abstract

Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations

Cited by 97 publications

References 27 publications

Cathodoluminescence as a method of extracting detailed information from nanophotonic systems: a study of silicon nanocrystals

Cathodoluminescence as a method of extracting detailed information from nanophotonic systems: a study of silicon nanocrystals

Photosensitive defects in silica layers implanted with germanium ions

Time-resolved photoluminescence of implanted SiO2:Si+ films

Contact Info

Product

Resources

About