Cathodoluminescence of electron irradiated cubic boron nitride

Зайцев, А.М.; Melnkov, A. A.; Shipilo, V. B.; Shishonok, E. M.

doi:10.1002/pssa.2210940264

Cited by 22 publications

(10 citation statements)

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“…Several vibronic centres were observed, dependent on crystal type. Electron irradiation introduced the RC series observed earlier [6] with CL, but only the RC1 centre was observed in all samples. RC2 was present in most samples, and RC3 was only observed in about 50% of the cases.…”

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confidence: 63%

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Photoluminescence spectroscopy of electron‐irradiation induced defects in cubic boron nitride (cBN)

Erasmus

Comins

2004

phys. stat. sol. (c)

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Cubic boron nitride is an ultra-hard material that is widely used in industrial applications where its specific mechanical properties make it the material of choice. Compared to diamond, which has similar applications, relatively little is known about the defects in cBN, their structure, electronic properties and their possible effects on the mechanical properties. We present results of photoluminescence spectroscopy at low temperature (< 10 K) of two types of cBN irradiated at ambient temperature with 1.9 MeV electrons. All the samples were small (< 1 mm diameter) single crystals of cBN. Three defect centres (with narrow lines at 2.28 eV, 2.15 eV and 1.98 eV) are introduced in both the amber-coloured and black-brown coloured samples by the irradiation. The amber coloured sample also shows a defect centre (at 1.65 eV) that is present before and after irradiation. Line shape analysis of the zero phonon lines of all three irradiation-induced centres shows that the lines are predominantly Gaussian in character, suggesting that linetype defects such as dislocations are a prevalent characteristic of these crystals. . It is the second hardest material after diamond, with high thermal conductivity and a high resistance to oxidation [2]; thus its main applications are industrial processes such as cutting, grinding and polishing. It has promising potential as a wide bandgap semiconductor for optical and electrical applications, but after initial pilot studies of a p-n junction and UV light emission [3,4] further progress has been slow.Cathodoluminescence (CL) studies [5] of as-synthesised cBN showed two broad bands, a stronger feature centred on 3.1 eV and a weaker feature centred on 2.2 eV, as well as the vibronic spectra of three defect centres, labelled GC1, GC2 and GC3. GC1 was identified as vacancy-related, while GC2 was thought to be due to a vacancy complex.CL of electron-irradiated (4.5 MeV) cBN [6] showed that irradiation introduced three vibronic defect centres, labelled RC1 (ZPL = 2.27 eV, 546.2 nm), RC2 (ZPL = 2.15 eV, 576.7 nm) and RC3 (ZPL = 1.99 eV, 623.1 nm). These centres were different to the GC series, and thought to be intrinsic in nature as they were present in all samples. The RC defects were also thought to be vacancy related. Ion implantation [7] with H

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confidence: 63%

“…CL of electron-irradiated (4.5 MeV) cBN [6] showed that irradiation introduced three vibronic defect centres, labelled RC1 (ZPL = 2.27 eV, 546.2 nm), RC2 (ZPL = 2.15 eV, 576.7 nm) and RC3 (ZPL = 1.99 eV, 623.1 nm). These centres were different to the GC series, and thought to be intrinsic in nature as they were present in all samples.…”

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confidence: 99%

Photoluminescence spectroscopy of electron‐irradiation induced defects in cubic boron nitride (cBN)

Erasmus

Comins

2004

phys. stat. sol. (c)

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“…It is worthwhile to notice that the change in the intensity of bands A and B, the lines of the GC and R C centers, when BNip"h is subjected to pressure, is of general character. The optically active defect centers GC-1 and GC-2 are most simple impurityvacancy complexes resistant to temperature which contain nitrogen and boron vacancies and the R C centers are also vacancy-type intrinsic defects [3]. Thus one can assume that the appearance of bands A and B in the CL spectra of cubic boron nitride is connected with the presence of multivacancy defects sensitive to elastic microstress.…”

Section: Discussionmentioning

confidence: 99%

“…In the luminescent spectra of cubic boron nitride (BNsph) broad bands with maxima near 2.3 and 2.65 eV, zero-phonon lines of optically active GC centers a t 1.76, 1.63, 1.55, 1.44 eV, as well as lines of radiative RC centers a t 2.23, 2.15, 1.99 eV have been observed [l to 31. The GC-1 and GC-2 centers, sensitive to elastic microstress and the perfection of the BNSph structure, are assumed [ 3 ] t o be impurity-vacancy complexes based on nitrogen and boron vacancies.…”

Section: Introductionmentioning

confidence: 99%

Influence of high pressure on cathodoluminescence of cubic boron nitride

Shipilo

Shishonok

Olekhnovich

et al. 1988

Phys. Stat. Sol. (a)

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It is shown that the pressure treatment of boron nitride (BNsph) polycrystals a t room temperature results in the change of broad band parameters (A, B, C) and zero-phonon lines of cathodoluminescent (CL) spectra, and in the appearance of RC centers. In the pressure treated ceramic samples BNsph the PC-1 (2.84 eV), PC-2 (2.325 eV), PC-3 (1.79 eV) centers of presumably interstitial nature are found. The comparative analysis of the dependence of the broad bands parameters and zero-phonon lines of the GC centers in the CL spectra of boron nitride on pressure makes i t possible t o connect the appearance of the A and B bands in the energy range 1.85 to 3.25 eV with electronic states in the band gap due to multi vacancy complexes based on boron and nitrogen vacancies, respectively, while the appearance of the C band (1.55 t o 1.85 eV) with the plastic deformation of BN,pti.Es wird gezeigt, daB eine Druckbehandlung von Bornitrid (BNspll)-Polykristallen bei Zimmertemperatur zu einer h d e r u n g der Parameter der breiten Banden (A, B, C) und der Null-Phononenlinien der Kathodolumineszenz (CL)-Spektren und dem Auftreten von RC-Zentren fuhrt. I n den druckbehandelten keramischen BNspi,-Proben werden PC-1 (2,84 eV)-, PC-2 (2,325 eV)-und PC-3 (1,79 eV)-Zentren mit wahrscheinlich Zwischengitternatur gefunden. Die vergleichende Analyse der Druckabhangigkeit der Parameter der breiten Banden und der Null-Phononenlinien der GC-Zentren im CL-Spektrum von Bornitrid ermoglicht, das Auftreten der Aund B-Banden im Energiebereich 1,85 bis 3,25 eV mit elektronischen Zustanden in der Bandlucke infolge Mehrfach-Vakanzenkomplexe auf der Basis von Bor-bzw. Stickstoff-Leerstellen zu verkniipfen, wahrend das Auftreten der C-Bande (1,55 bis 1,85 eV) mit der plastischen Deformation von BNsph verbunden ist.

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“…Synthetic c-BN crystals of up to a few mm in size and lower crystallographic perfection have been produced in similar, extreme conditions of pressure and temperature as diamond, using a similar reaction volume design, but with a more complex chemistry [7]. Until recently, the main knowledge concerning point defects in c-BN was based on the results of simple ESR [8][9][10][11][12] and luminescence [13][14][15] measurements on crystalline powders and ceramics. Although several point defect structures have been proposed to explain the resulting experimental data, the proposed models are highly speculative in view of the limited information available from such simple measurements, as well as of the possible presence, besides the defects localized in the crystal lattice, of surface and intergrowth boundaries states.…”

Section: Introductionmentioning

confidence: 99%

ESR characterization of point defects in amber colored c-BN super abrasive powders

Nistor¹,

Ghica²,

Stefan³

et al. 2004

phys. stat. sol. (a)

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Cubic boron nitride (c-BN) crystalline superabrasive powder (Borazon ** CBN 400), consisting of 200 -300 microns sized amber colored crystallites prepared by HP/HT synthesis, has been examined from 2.1 K to 293 K by X-band ESR spectroscopy. The observed spectrum consists of a component line A1, visible in the whole temperature range, and two component lines A2 and A3, visible at high and low temperatures, respectively. The A1 and A3 lines originate from transitions inside S = 1/2 ground states of distinct paramagnetic species and A2 from transitions inside an excited state of another paramagnetic center. The intensity of the A1 and A3 lines changes differently during in situ low temperature illumination in the UV-VIS range.

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Cathodoluminescence of electron irradiated cubic boron nitride

Cited by 22 publications

References 1 publication

Photoluminescence spectroscopy of electron‐irradiation induced defects in cubic boron nitride (cBN)

Photoluminescence spectroscopy of electron‐irradiation induced defects in cubic boron nitride (cBN)

Influence of high pressure on cathodoluminescence of cubic boron nitride

ESR characterization of point defects in amber colored c-BN super abrasive powders

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