Cathodoluminescence from nanocrystalline silicon films and porous silicon

Piqueras, J.; Méndez, B.; Plugaru, R.; Crăciun, G.; Garcı́a, J.A.; Remón, A.

doi:10.1007/s003390050897

Cited by 18 publications

(14 citation statements)

References 12 publications

(21 reference statements)

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“…Blue-green CL bands in oxidized PS have been attributed in some cases, e.g., Refs. 3 and 7, to the presence of oxides while other authors 8,9 did not observe a relation between blue CL and the oxide layer. Since some of the CL observations, including the lack of stability of the luminescence emission under electron irradiation, seem to be related to surface reactions, the use of clean surfaces of PS could enable the study of crystallite-related CL emission.…”

mentioning

confidence: 77%

Cathodoluminescence enhancement in porous silicon cracked in vacuum

Rams

Méndez

Crăciun

et al. 1999

Applied Physics Letters

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells J. Appl. Phys. 113, 073505 (2013) Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur Appl. Phys. Lett. 102, 031909 (2013) Whispering gallery and Fabry-Pérot modes enhanced luminescence from individual ZnO micro mushroom J. Appl. Phys. 113, 034313 (2013) Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures Appl. Phys. Lett. 101, 212107 (2012) Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

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confidence: 77%

Cathodoluminescence enhancement in porous silicon cracked in vacuum

Rams

Méndez

Crăciun

et al. 1999

Applied Physics Letters

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“…The best fit for the latter compound corresponds to Er 5 Si 3 . Previous SEM-CL microscopy observations of these samples revealed that most of the precipitates present an intense luminescence band in the violet-blue range peaked at about 360-370 nm [9] while CL emission of the unimplanted amorphous layers presented a weak blue emission attributed to nanocrystals embedded in the amorphous matrix [10,11].…”

Section: Resultsmentioning

confidence: 99%

Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix

Garcı́a

Plugaru

Méndez

et al. 2004

Eur. Phys. J. Appl. Phys.

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Abstract. The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O has been studied by photoluminescence (PL) and cathodoluminescence (CL) in the scanning electron microscope. Annealing in nitrogen causes the formation of oxide species and Er-Si complexes or precipitates as well as spectral changes in the visible and infrared ranges. The main CL emission takes place in the visible range while PL spectra reveal intense visible and infrared emission. CL spectra show blue-violet, or green, emission bands whose relative intensities depend on the post-implantation annealing temperature. The PL spectra show a blue-violet band with a series of lines in the violet region related to phonon assisted transitions as well as different emission bands in the range 1200-1500 nm. The influence of the annealing-induced structural changes on the observed spectra is discussed.PACS. 61.72.Tt Doping and impurity implantation in germanium and silicon -78.55.-m photoluminescence, properties and materials

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“…The presence of the blue band under the conditions of inert atmosphere annealing indicates that the luminescent emission at short wavelengths is not necessarily related to the presence of an oxide phase. Previous comparative CL studies of PS and nanocrystalline Si films have shown the presence of a component of the blue emission in the PS that is not related to oxide layers [10].…”

Section: Resultsmentioning

confidence: 99%

Optical Absorption and Luminescence Study of the Effect of Thermal Treatments on the Porous Silicon Surface

et al. 1999

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The evolution of the cathodoluminescent emission bands of porous silicon at 420-480 nm, 540 nm and 640 nm under oxidizing and inert atmosphere annealings has been investigated and correlated to the structural reconstruction of the porous silicon surface during the treatments. Dry oxidation at low temperature of 450'C determines a less defected bonding interface structure of the growing oxide matrix comparatively with an oxidation treatment at 1000°C. The optical absorption band at 883 cm1 observed in the 1000°C oxidized porous silicon is correlated to the presence of the interface defect centers. The quenching of the 540 nm and 640 nm emission bands in the high temperature oxidized porous silicon results from nonradiative transitions in the associated defect levels.

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Cathodoluminescence from nanocrystalline silicon films and porous silicon

Cited by 18 publications

References 12 publications

Cathodoluminescence enhancement in porous silicon cracked in vacuum

Cathodoluminescence enhancement in porous silicon cracked in vacuum

Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix

Optical Absorption and Luminescence Study of the Effect of Thermal Treatments on the Porous Silicon Surface

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