Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers

Trukhin, A.N.; Jansons, J.; Fitting, H.‐J.; Barfels, T.; Schmidt, Bernd

doi:10.1016/j.jnoncrysol.2003.08.080

Cited by 22 publications

(21 citation statements)

References 23 publications

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“…The assumption that the presence of the third hybrid center correlates with the fact that the kinetic decay curve of the singlet luminescence (S 1 ? S 0 ) in this sample (700°C) is approximated best by the sum of three compo- decay data are more precise than former ones given for SiO 2 :Ge samples in [19].…”

Section: Discussionmentioning

confidence: 50%

Photosensitive defects in silica layers implanted with germanium ions

Zatsepin¹,

Fitting²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

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a b s t r a c tGe-implanted silica layers have been investigated by high-power pulsed synchrotron-photoluminescence (PL), photoluminescence excitation spectroscopy (PLE), and optically stimulated electron emission (OSEE) with respect to association of excitation and absorption bands to respective emission bands and lifetimes of excited defect states. In this way singlet-singlet (4.35 eV) and triplet-singlet (3.18 eV) radiative transitions from excited states of oxygen-deficient centers (ODC) in Ge-doped silica glass are characterized by their absorption and emission bands as well as their lifetimes. The main channel for non-radiative relaxation of photoexcitation is electron emission by the OSEE effect. The OSEE shows non-radiative transitions of surface E 0 s and bulk E 0 -centers found with concentrations of (2.7-3.4) Â 10 12 cm À2 and (2-4) Â 10 16 cm À3, respectively.

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Section: Discussionmentioning

confidence: 50%

Photosensitive defects in silica layers implanted with germanium ions

Zatsepin¹,

Fitting²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

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“…Previous studies suggest, at least, three possibilities for several PL peaks appearing at 1.8 -2.3 eV, which are non-bridging oxygen hole center (≡Ge-O·) [27], self-trapped exciton [28], and nano-crystalline Ge [26,[29][30][31][32].…”

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confidence: 99%

Photo-induced phenomena in GeO2 glass

Terakado

Tanaka

2006

Journal of Non-Crystalline Solids

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Photo-induced changes in GeO2 glass have been studied in optical and structural properties. Band-gap excitation gives rise to modifications in mid-gap optical absorption and photo-luminescence spectrum. It also produces electron-spin signals at g ≃ 1.995 and 2.008.Raman-scattering spectrum becomes sharper, x-ray diffraction patterns show disappearance of a crystalline peak, and illuminated surfaces expand. These observations can be accounted for by assuming bond transformations from rutile-like to defective quartz-like structures and/or from small to large rings. These photo-induced changes in GeO2 are comparatively discussed with those in SiO2 and GeS2.

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“…We have analyzed the effect of implantation and annealing on the density of Si-H x (x = 1, 3) and Si-O-H bonds via FTIR absorption at ∼2100 cm −1 ( figure 5) and ∼3750 cm −1 (figures 6 and 7), respectively [13,[14][15][16]. We could not detect absorption peaks at ∼1450 or ∼2900 cm −1 corresponding to C-H x bonds [14,17].…”

Section: Resultsmentioning

confidence: 98%

Shift in room-temperature photoluminescence of low-fluence Si⁺-implanted SiO₂films subjected to rapid thermal annealing

Tsai

Yang

et al. 2008

Science and Technology of Advanced Materials

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We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3 × 10 16 cm −2shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150• C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

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Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers

Cited by 22 publications

References 23 publications

Photosensitive defects in silica layers implanted with germanium ions

Photosensitive defects in silica layers implanted with germanium ions

Photo-induced phenomena in GeO2 glass

Shift in room-temperature photoluminescence of low-fluence Si⁺-implanted SiO₂films subjected to rapid thermal annealing

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Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers

Cited by 22 publications

References 23 publications

Photosensitive defects in silica layers implanted with germanium ions

Photosensitive defects in silica layers implanted with germanium ions

Photo-induced phenomena in GeO2 glass

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2films subjected to rapid thermal annealing

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Product

Resources

About

Shift in room-temperature photoluminescence of low-fluence Si⁺-implanted SiO₂films subjected to rapid thermal annealing