Carrier transport mechanisms of bistable memory devices fabricated utilizing core–shell CdSe/ZnSe quantum-dot/multi-walled carbon nanotube hybrid nanocomposites

Li, Fushan; Son, Dong Ick; Kim, Tae Whan; Ryu, Euidock; Kim, Sang Wook

doi:10.1088/0957-4484/20/8/085202

Cited by 21 publications

(9 citation statements)

References 20 publications

(21 reference statements)

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“…Oh et al reported that InAs/GaAs quantum dot layers decrease the THz power absorption and conductivity, suggesting that the quantum dots act as carrier traps and capture the mobile carriers . Recently, the electrical conductivity of CdSe/ZnSe quantum dot−MWNT hybrid nanostructures was measured to show that the quantum dots act as carrier traps . Therefore, all three types of NC would consistently serve as carrier (electron) traps on the CNT and GO.…”

Section: Resultsmentioning

confidence: 99%

Terahertz Spectroscopy of Nanocrystal−Carbon Nanotube and −Graphene Oxide Hybrid Nanostructures

Jung¹,

Myung²,

Cho³

et al. 2010

J. Phys. Chem. C

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We employed terahertz (THz) spectroscopy to study the optical/electrical properties of various nanocrystal (NC)−carbon nanotube (i.e., single-, double-, and multiwalled) and −graphene oxide (GO) hybrid nanostructures. The power absorption and conductivity decrease following the order single-walled (SWNT) > double-walled (DWNT) > multiwalled carbon nanotubes (MWNT) ≈ GO showed a strong dependence on the crystallinity of the graphitic layers. The deposition of platinum (Pt), copper sulfide (Cu2S), and tin oxide (SnO2) NC reduced significantly the conductivity of the SWNT and DWNT, irrespective of the nature of the NC but negligibly that of the MWNT and GO. X-ray photoelectron and Raman spectroscopy analyses suggested that the conductivity of the NC hybrid nanostructures was mainly reduced by the electron trapping at the surface defects that formed during the in situ solvothermal growth of the NC. As the conductivity of the graphitic layers increases, such electron trapping effect becomes more significant.

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Section: Resultsmentioning

confidence: 99%

Terahertz Spectroscopy of Nanocrystal−Carbon Nanotube and −Graphene Oxide Hybrid Nanostructures

Jung¹,

Myung²,

Cho³

et al. 2010

J. Phys. Chem. C

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“…The devices based on the CdSe nanoparticles exhibit a high on/off ratio and demonstrate read‐only and random‐access memory applications. The memory phenomenon has also been found in CdSe/ZnS nanoparticles sandwiched between C‐60 layers,94 CdSe/ZnS nanocrystals in TiO 2 thin films,95 core/shell CdSe/ZnSe quantum dot/multiwalled carbon nanotube hybrid nanocomposites,96 CdTe/CdSe core/shell nanoparticles/poly(methylmethacrylate) nanocomposites,97 and CdSe nanoparticles/poly(methyl methacrylate) (PMMA) blend 98…”

Section: Novel Properties and Applications Of Cdsementioning

confidence: 92%

Growth and Device Application of CdSe Nanostructures

Zhao

Fang

2012

Adv Funct Materials

128

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Inorganic semiconductor nanostructures have attracted increasing interest in recent years because of their distinguishable role in fundamental studies and technical applications, mainly due to their size-and shape-dependent properties and fl exible processing methods. The use of such nanostructures in optic, optoelectric, and piezoelectric prospects is expected to play a crucial role in future nanoscale devices. Cadmium selenide (CdSe), a well-known direct bandgap II-VI semiconductor in which the bandgap favors absorption over a wide range of the visible spectrum, has been a promising material for applications in such fi elds as photodetectors, fi eld-effect transistors (FETs), fi eld emitters, solar cells, light-emitting diodes (LEDs), memory devices, biosensors, and biomedical imaging. The research on CdSe nanostructures has made remarkable progress in the last few years. The research activities on CdSe nanostructures including various methods for the synthesis of CdSe nanostructures and the unique properties and device applications of these nanostructures are reviewed. Potential future directions of this research area are also highlighted.

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“…Kim et al reported a bistable memory device utilizing the self-assembled conjugations of CdSe/ZnSe core–shell QDs onto the multiwall carbon nanotubes by the complex reaction . With the CdSe/ZnSe QDs, the resistive switching voltage was significantly reduced from 1.6 to 1.1 V. Electrons injected from the electrodes transported along the carbon nanotubes.…”

Section: Building Memristor Devices With Qdsmentioning

confidence: 99%

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

et al. 2020

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The continued growth in the demand of data storage and processing has spurred the development of high-performance storage technologies and brain-inspired neuromorphic hardware. Semiconductor quantum dots (QDs) offer an appealing option for these applications since they combine excellent electronic/optical properties and structural stability and can address the requirements of low-cost, large-area, and solution-based manufactured technologies. Here, we focus on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids. We introduce recent advances of QDs and highlight their unique electrical and optical features for designing future electronic devices. We also discuss the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors. Then, we review recent advances in QD-based neuromorphic devices from artificial synapses to light-sensory synaptic platforms. Finally, we highlight major challenges for commercial translation and consider future directions for the postsilicon era.

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Carrier transport mechanisms of bistable memory devices fabricated utilizing core–shell CdSe/ZnSe quantum-dot/multi-walled carbon nanotube hybrid nanocomposites

Cited by 21 publications

References 20 publications

Terahertz Spectroscopy of Nanocrystal−Carbon Nanotube and −Graphene Oxide Hybrid Nanostructures

Terahertz Spectroscopy of Nanocrystal−Carbon Nanotube and −Graphene Oxide Hybrid Nanostructures

Growth and Device Application of CdSe Nanostructures

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

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