Growth and Device Application of CdSe Nanostructures

Zhao, Lijuan; Hu, Linfeng; Fang, Xiaosheng

doi:10.1002/adfm.201103088

Cited by 128 publications

(68 citation statements)

References 142 publications

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“…Among them, CdSe QDs, are promising for numerous applications in photodetectors, field-effect transistors, solar cells, light-emitting diodes [2][3][4] . The information about the phonon spectrum of QDs is important for practical applications, since the phonons determine the channels for charge carrier relaxation in QD based devices [5][6][7] .…”

Section: Introductionmentioning

confidence: 99%

Surface- and tip-enhanced resonant Raman scattering from CdSe nanocrystals

Sheremet

Milekhin

Rodriguez

et al. 2015

Phys. Chem. Chem. Phys.

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Surface- and tip-enhanced resonant Raman scattering (resonant SERS and TERS) by optical phonons in a monolayer of CdSe quantum dots (QDs) is demonstrated. The SERS enhancement was achieved by employing plasmonically active substrates consisting of gold arrays with varying nanocluster diameters prepared by electron-beam lithography. The magnitude of the SERS enhancement depends on the localized surface plasmon resonance (LSPR) energy, which is determined by the structural parameters. The LSPR positions as a function of nanocluster diameter were experimentally determined from spectroscopic micro-ellipsometry, and compared to numerical simulations showing good qualitative agreement. The monolayer of CdSe QDs was deposited by the Langmuir-Blodgett-based technique on the SERS substrates. By tuning the excitation energy close to the band gap of the CdSe QDs and to the LSPR energy, resonant SERS by longitudinal optical (LO) phonons of CdSe QDs was realized. A SERS enhancement factor of 2 × 10(3) was achieved. This allowed the detection of higher order LO modes of CdSe QDs, evidencing the high crystalline quality of QDs. The dependence of LO phonon mode intensity on the size of Au nanoclusters reveals a resonant character, suggesting that the electromagnetic mechanism of the SERS enhancement is dominant. Finally, the resonant TERS spectrum from CdSe QDs was obtained using electrochemically etched gold tips providing an enhancement on the order of 10(4). This is an important step towards the detection of the phonon spectrum from a single QD.

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Section: Introductionmentioning

confidence: 99%

Surface- and tip-enhanced resonant Raman scattering from CdSe nanocrystals

Sheremet

Milekhin

Rodriguez

et al. 2015

Phys. Chem. Chem. Phys.

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“…13,14 Nano-sized materials exhibit uniquely physical and chemical properties compared with bulk materials. [15][16][17][18][19][20][21] Research on the synthesis and properties of CdS nanostructures has increased steadily. 22 Multiform CdS nanostructures, such as nanoparticles/quantum dots, 23,24 nanowires/nanorods, [25][26][27][28][29][30][31][32] nanobelts/nanoribbons, [33][34][35][36][37][38] nanotubes, 39,40 nanosheets, 26,41 have been prepared by a variety of techniques, such as solvothermal method, 30,31,42 chemical bath deposition, 43 electrochemical deposition, 44 thermal evaporation, 34,35,37,38,41 hydrothermal method 29,32,45 and MOCVD.…”

Section: Introductionmentioning

confidence: 99%

NOVEL CdS NANOBELTS FORMED BY NANOPARTICLES: SYNTHESIS, CHARACTERIZATION AND OPTICAL PROPERTIES

Duan

Hao

et al. 2013

Mod. Phys. Lett. B

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In this paper, we report a novel CdS nanobelt formed by nanoparticles and prepared by an accurately designed thermal-evaporating method. The CdS nanobelts present singlecrystalline characteristic and their zone axis was along [2110] crystal direction. Based on TEM images, a proper growth mechanism of CdS nanobelts is proposed. The growth of CdS nanobelts follows three steps: (a) CdS nanoparticles with the diameter of ∼ 3 nm were formed by reaction of Cd and S atoms at high temperature, (b) nanoparticles aggregated along several specific crystal directions ([2110], [0110] and [0001]) and nanobelt with planar surfaces were formed by an oriented attachment growth, (c) nanoparticles were continuously grown on the surface of nanobelt via a homo-epitaxial route. Two Raman peaks (at 299.0 cm −1 and 603.5 cm −1 ) of the CdS nanobelts shift toward lower frequency compared with the reported works. A symmetrical intensive peak centered at 2.43 eV was observed in PL spectrum of CdS nanobelts. These novel CdS nanobelts show favorable optical emission properties and are promising candidates for future applications in optoelectronic nanodevices.

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“…Among II-VI compounds, Cadmium Selenide (CdSe) has been investigated for applications in electronic and optoelectronic devices such as laser diodes [2], high efficiency solar cells [3], nanosensors [4], Schottky diodes [5] and biomedical imaging devices [6]. It has a direct band gap with high absorption coefficient near the band edge, which allows its use in thin film devices; it is especially interesting for applications in solar hybrid systems [7].…”

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confidence: 99%