In this paper, we report a novel CdS nanobelt formed by nanoparticles and prepared by an accurately designed thermal-evaporating method. The CdS nanobelts present singlecrystalline characteristic and their zone axis was along [2110] crystal direction. Based on TEM images, a proper growth mechanism of CdS nanobelts is proposed. The growth of CdS nanobelts follows three steps: (a) CdS nanoparticles with the diameter of ∼ 3 nm were formed by reaction of Cd and S atoms at high temperature, (b) nanoparticles aggregated along several specific crystal directions ([2110], [0110] and [0001]) and nanobelt with planar surfaces were formed by an oriented attachment growth, (c) nanoparticles were continuously grown on the surface of nanobelt via a homo-epitaxial route. Two Raman peaks (at 299.0 cm −1 and 603.5 cm −1 ) of the CdS nanobelts shift toward lower frequency compared with the reported works. A symmetrical intensive peak centered at 2.43 eV was observed in PL spectrum of CdS nanobelts. These novel CdS nanobelts show favorable optical emission properties and are promising candidates for future applications in optoelectronic nanodevices.
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