2013
DOI: 10.1016/j.solmat.2012.09.030
|View full text |Cite
|
Sign up to set email alerts
|

Carrier transport in a quantum dot solar cell using semiclassical and quantum mechanical models

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
8
0

Year Published

2013
2013
2023
2023

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 15 publications
(8 citation statements)
references
References 44 publications
0
8
0
Order By: Relevance
“…For IBSC device simulation, the transport equation is usually treated within the classical, i.e., drift-diffusion equation. Compared to the semi-classical and quantum methods, 18 the drift-diffusion method has an advantage that it can include whole cell structure which scale is $1 lm. This approach captures all the relevant recombination processes, both in the IB region but also elsewhere in the device structure, e.g., surface recombination.…”
Section: Development Of Ibsc Device Simulationmentioning
confidence: 99%
“…For IBSC device simulation, the transport equation is usually treated within the classical, i.e., drift-diffusion equation. Compared to the semi-classical and quantum methods, 18 the drift-diffusion method has an advantage that it can include whole cell structure which scale is $1 lm. This approach captures all the relevant recombination processes, both in the IB region but also elsewhere in the device structure, e.g., surface recombination.…”
Section: Development Of Ibsc Device Simulationmentioning
confidence: 99%
“…Semichaevsky and Johnson 75 have used a multiscale model for carrier transport to simulate a p-i-n solar cell that includes InAs/GaAs QDs. Their results suggest that, while contributing to the photocurrent due to absorption of photons with energies less than the bulk GaAs bandgap, stacked layers of InAs QD arrays with high in-plane densities used in a solar cell can inhibit the transport of photocarriers originating from the absorption of photons with energies above bulk GaAs bandgap.…”
Section: Quantum Dot Scattering Effect On Transportationmentioning
confidence: 99%
“…Their results suggest that, while contributing to the photocurrent due to absorption of photons with energies less than the bulk GaAs bandgap, stacked layers of InAs QD arrays with high in-plane densities used in a solar cell can inhibit the transport of photocarriers originating from the absorption of photons with energies above bulk GaAs bandgap. 75 Quantum scattering of carriers by the confinement potential, resulting in longer paths travelled by the carriers and thus an increased nonradiative (NR) recombination in the intrinsic region of the cell. 76 The reflected carriers also form an additional space charge that reduces the built-in field in the heterostructure region.…”
Section: Quantum Dot Scattering Effect On Transportationmentioning
confidence: 99%
“…Quantum dot based devices for example, which are of interest for intermediate band solar cells [43], lend themselves to a modeling strategy where the optical and electronic properties of the quantum dot arrays are obtained by microscopic models. This has been done for example in [55], where a Monte Carlo model has been combined with a density matrix based microscopic description of the quantum dot absorber layer.…”
Section: Prospects Of Multiscale Simulations For Photovoltaicsmentioning
confidence: 99%