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Akimoto, R.; Ando, Koji; Sasaki, Fumio; Kobayashi, S.; Tani, Tadaaki

doi:10.1103/physrevb.56.9726

Cited by 38 publications

(23 citation statements)

References 22 publications

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“…In II-VI DMS electron spin relaxation is much faster than in the corresponding nonmagnetic host, as expected because of the strong random exchange fields created by the magnetic atoms (see Sect. 13.6) [87,118]. Note that in Voigt geometry the measured precession frequency gives a clear signature of the spins which are being observed, provided that their effective g-factors are known.…”

Section: Carrier Spin Dynamicsmentioning

confidence: 94%

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Cibert

Scalbert

2008

Springer Series in Solid-State Sciences

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Diluted Magnetic Semiconductors (DMS) form a new class of magnetic materials, which fill the gap between ferromagnets and semiconductors [1]. In the early literature these DMS were often named semimagnetic semiconductors, because they are midway between nonmagnetic and magnetic materials. DMS are semiconductor compounds (A 1−x M x B) in which a fraction x of the cations is substituted by magnetic impurities, thereby introducing magnetic properties into the host semiconductor AB. This makes a great difference with semiconducting ferromagnets, i.e., ferromagnetic materials exhibiting semiconductor-like transport properties, which have been known for some time (see a review in [2]). A DMS is expected to retain most of its classical semiconducting properties, and to offer the opportunity of a full integration into heterostructures, including heterostructures with the host material. The great challenge and ultimate goal of the research in this field is to obtain DMS ferromagnetic at room temperature, which can be integrated in semiconductor heterostructures for electronic or optoelectronic applications. This is one of the key issues for the advent of spintronics devices.Among the principal DMS families, II-VI and, to a less extent, III-V based DMS, with Mn as the magnetic impurity, are best understood. For this reason the present chapter will be mainly based on these compounds to introduce the wellestablished basic physics of DMS. More details can be found in review papers such as [3][4][5]. Some issues related to work in progress, generally on novel materials, will be also discussed but only briefly.

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Section: Carrier Spin Dynamicsmentioning

confidence: 94%

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Cibert

Scalbert

2008

Springer Series in Solid-State Sciences

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“…The results are shown in Fig. 2 spin-relaxation times of electrons and holes were reported [6,7]. Several discrepancies can be seen in the experimental results and the calculations in Fig.…”

Section: Resultsmentioning

confidence: 75%

Pump–probe spectroscopy of spin-injection dynamics in double quantum wells of diluted magnetic semiconductor

Nishibayashi

Aoshima

Souma

et al. 2006

Journal of Luminescence

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“…The hh spin can immediately be relaxed via band mixing with lh. Also, the hh spin can relax through p-d exchange interaction with Mn-spins in the DMS barrier [7], since the hh wave function significantly spreads due to the low-energy barrier in high fields. The electron spin relaxation time is rather slower as 500 ps in the present QW.…”

Section: Resultsmentioning

confidence: 99%