White electroluminescence based on quantum dots (QDs) is usually realized by incorporating different types of QDs or QDs plus rare earth ion phosphors into a single device. Herein, we report quasi-white electroluminescence in pure silicon carbide QDs-based light-emitting devices (LEDs). The carrier transport and recombination mechanisms are investigated through analyzing the current density versus bias curves and spatial distribution of energy levels. The carrier transport mechanism is dominated by quantum tunneling at low bias and direct injection at high bias, respectively. The quasi-white electroluminescence arises from recombination of the injected electrons and holes in the SiC QDs in the devices.Electrically driven semiconductor quantum dots (QDs)-based light-emitting devices (LEDs) [1] including those based on selfassembled QDs [2,3] have attracted great interest during the past decade owing to stability and color-tunable luminescence of the QDs. To realize quasi-white electroluminescence by using QDs, the researchers usually utilize QDs plus blue LED chips, [4,5] different types of QDs, [6] or QDs plus organic/rare earth ion phosphors [7][8][9] to construct LEDs. Herein, we report the quasiwhite electroluminescence by using the pure silicon carbide QDs-based LEDs.