Carrier Concentration Disturbances in Semiconductors

Spreading-resistance temperature sensor on silicon-on-insulator

“…In other words, the electric field in the lowly doped region extracts minority carriers from the junction region faster than the highly doped region can supply. Consequently, the minority-carrier concentration near the junction decreases, resulting in the so-called exclusion effect [4]. When the current is reversed, the lowly doped region can supply enough minority carriers and hence, the device behaves like an ordinary diffused resistor.…”

“…The operating principle of the SRT sensor lies in the fact that the minority-carrier exclusion effect occurs at n -n highlow junction under high current densities [4]. This effect suppresses the thermal generation of carriers and maintains extrinsic-carrier concentrations even at high temperatures, thereby increasing the maximum operating temperature of the device.…”

Spreading-Resistance Temperature Sensor on SOI

“…Hence, these sensors can be potentially used in a multitude of applications, where conventional silicon sensors are not suitable. The SRT sensor is based on the minority-carrier exclusion effect [2] at high-low junctions which suppresses the effect of thermal generation of carriers and maintains extrinsiic-carrier concentrations at intrinsic temperatures, thereby increasing the maximum operating te'mperature of the device. The SRT sensor has been around over 10 years [l, 31.…”

Résolution des équations de transport par linéarisation

“…D'une maniere identique, les equations linearisees peuvent etre appliquees a d'autres mecanismes de conduction par exemple 1'exclusion [8], definie par y(O) Yo, ou a des structures finies du type P-I-N. Ces courbes sont en accord complet avec les solutions exactes obtenues numeriquement [2,9] correspondant au domaine de validite de la methode des petits signaux.…”