1999
DOI: 10.1109/55.798053
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Spreading-resistance temperature sensor on silicon-on-insulator

Abstract: A spreading-resistance temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) substrate and achieves promising characteristics as compared with similar SRT sensor on bulk silicon wafer. Moreover, experimental results show that the maximum operating temperature of thin-film (1.2 m) SOI SRT sensor can reach 450 C, much higher than 350 C of thickfilm (10 m) SOI SRT sensor under the same current level. With complete oxide isolation, this sensor structure can be potentially used in low-power integrate… Show more

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Cited by 26 publications
(8 citation statements)
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“…The experimental data show NTCR property. The dependence of resistance on temperature approximately follows an exponential [11][12][13][14][15][16][17][18]. Hence the experimental data match with the Steinhart-Hart equation, revealing the significance of nano crystalline CaTiO 3 as a promising environment friendly material for high temperature thermistor application.…”
Section: Electrical Characteristicsmentioning
confidence: 65%
“…The experimental data show NTCR property. The dependence of resistance on temperature approximately follows an exponential [11][12][13][14][15][16][17][18]. Hence the experimental data match with the Steinhart-Hart equation, revealing the significance of nano crystalline CaTiO 3 as a promising environment friendly material for high temperature thermistor application.…”
Section: Electrical Characteristicsmentioning
confidence: 65%
“…Active devices are normally unavailable in high-temperature environments because thermo-mechanical fatigue of the package material will cause the device to fail. Traditional wire-testing approaches suffer from ohmic contact failure and unstable wire connections at high temperature [5,6]. Wireless passive sensors are promising in harsh environments because they implement battery-free and contactless measurements.…”
Section: Introductionmentioning
confidence: 99%
“…7,8 Recently, the lateral temperature sensor in Fig. 1(b) fabricated by thin-film silicon-on-insulator (SOI) processing [9][10][11] was studied, and its T max ranges from 300°C to 450°C. Besides possessing a high working temperature, the lateral temperature sensor is also suitable for integration into a microchip due to its planar structure.…”
Section: Introductionmentioning
confidence: 99%