Spreading-resistance temperature sensor on silicon-on-insulator

Lai, P.T.; Li, Bin; Chan, C.L.; Sin, J.K.O.

doi:10.1109/55.798053

Cited by 26 publications

(8 citation statements)

References 6 publications

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“…The experimental data show NTCR property. The dependence of resistance on temperature approximately follows an exponential [11][12][13][14][15][16][17][18]. Hence the experimental data match with the Steinhart-Hart equation, revealing the significance of nano crystalline CaTiO 3 as a promising environment friendly material for high temperature thermistor application.…”

Section: Electrical Characteristicsmentioning

confidence: 65%

CaTiO3 nano ceramic for NTCR thermistor based sensor application

2014

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Abstract:It is possible to fabricate highly sensitive NTCR (negative temperature coefficient of resistance) thermistor using nano crystalline CaTiO 3 synthesized by high energy ball milling. Disc shaped green pellets were prepared and effects of sintering on the disc pellets were studied as thermistor by sintering the samples at 1000 ℃, 1100 ℃ and 1200 ℃. The as-prepared samples were characterized by X-ray diffraction (XRD), impedance analysis and electrical measurement. The resistivity of the prepared samples varies predictably with temperature: this makes them promising material for temperature sensor. The experimental results prove that nano crystalline CaTiO 3 ceramic is one kind of thermistor with exponential negative temperature coefficient of resistance in the temperature range of 300-500 ℃. The samples have the advantages of rapid response, high sensitivity and capability to withstand thermal surges over the temperature range of 300-500 ℃. Resistance-temperature characteristics are described by thermistor equation with thermistor constant around 4003 K to 10795 K and thermal coefficient of resistance α around 1%/℃ to 13%/℃. The activation energy is in the range of 0.34-0.93 eV. The observed thermistor parameters are found to be comparable with many of the known thermistor materials. This suggests that the electrical properties can be adjusted to desirable values by controlling the temperature parameter. The influence of fabrication process of disc thermistor and electrical properties are discussed. The study shows the potential of nano crystalline CaTiO 3 to act as an NTCR material for thermistor applications.

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Section: Electrical Characteristicsmentioning

confidence: 65%

CaTiO3 nano ceramic for NTCR thermistor based sensor application

2014

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“…Active devices are normally unavailable in high-temperature environments because thermo-mechanical fatigue of the package material will cause the device to fail. Traditional wire-testing approaches suffer from ohmic contact failure and unstable wire connections at high temperature [5,6]. Wireless passive sensors are promising in harsh environments because they implement battery-free and contactless measurements.…”

Section: Introductionmentioning

confidence: 99%

Dielectrically-Loaded Cylindrical Resonator-Based Wireless Passive High-Temperature Sensor

Xiong

Tan

et al. 2016

Sensors

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The temperature sensor presented in this paper is based on a microwave dielectric resonator, which uses alumina ceramic as a substrate to survive in harsh environments. The resonant frequency of the resonator is determined by the relative permittivity of the alumina ceramic, which monotonically changes with temperature. A rectangular aperture etched on the surface of the resonator works as both an incentive and a coupling device. A broadband slot antenna fed by a coplanar waveguide is utilized as an interrogation antenna to wirelessly detect the sensor signal using a radio-frequency backscattering technique. Theoretical analysis, software simulation, and experiments verified the feasibility of this temperature-sensing system. The sensor was tested in a metal-enclosed environment, which severely interferes with the extraction of the sensor signal. Therefore, frequency-domain compensation was introduced to filter the background noise and improve the signal-to-noise ratio of the sensor signal. The extracted peak frequency was found to monotonically shift from 2.441 to 2.291 GHz when the temperature was varied from 27 to 800 °C, leading to an average absolute sensitivity of 0.19 MHz/°C.

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“…7,8 Recently, the lateral temperature sensor in Fig. 1(b) fabricated by thin-film silicon-on-insulator (SOI) processing [9][10][11] was studied, and its T max ranges from 300°C to 450°C. Besides possessing a high working temperature, the lateral temperature sensor is also suitable for integration into a microchip due to its planar structure.…”

Section: Introductionmentioning

confidence: 99%

Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model

Wu¹,

Lai²

2004

Journal of Applied Physics

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Based on the minority-carrier exclusion theory, an analytical model is developed to explain the operating principle of temperature sensors fabricated on thin silicon film. The model also takes into account the effects of temperature and carrier concentrations on carrier mobilities. Device simulation is used to verify the proposed model in terms of the carrier-concentration distribution in the minority-exclusion region, exclusion length, and the temperature dependence of the sensor resistance. Results show that the model is applicable for a sensor operating over a wide temperature range, provided that its bias current is not too high.

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Spreading-resistance temperature sensor on silicon-on-insulator

Cited by 26 publications

References 6 publications

CaTiO3 nano ceramic for NTCR thermistor based sensor application

CaTiO3 nano ceramic for NTCR thermistor based sensor application

Dielectrically-Loaded Cylindrical Resonator-Based Wireless Passive High-Temperature Sensor

Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model

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