Carbon Nanotubes for VLSI: Interconnect and Transistor Applications

Awano, Yuji; Sato, Shintaro; Nihei, Misato; Sakai, Tadashi; Ohno, Yutaka; Mizutani, Takashi

doi:10.1109/jproc.2010.2068030

Cited by 97 publications

(78 citation statements)

References 78 publications

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“…For ballistic nano conductors T r =1 and in this case when f (V, T ) also approaches unity, nanodevice resistance R(V, T ) approaches R Q , which is its minimum value as verified by various experiments [20,21,22]. Although constant resistance values of ballistic nano conductors are extensively studied in the literature [23,24], a resistance expression dependent on both the applied voltage and the temperature is given for the first time in this paper as in Eq. (5) to the knowledge of the authors.…”

Section: Voltage Dependent Resistance Of Ballistic Nano Conductorsmentioning

confidence: 74%

Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity

Yamaçli

2013

Nano-Micro Lett.

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Abstract:In this study, an algebraic current-voltage (I-V ) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer's formulation. A voltage and temperature dependent resistance expression is also obtained. It is shown that the presented algebraic I-V expression and the original Landauer's formula give the same characteristics as expected. Moreover, the I-V characteristics of ballistic nano conductors are investigated and it is concluded that there is an inescapable nonlinearity originating from the curvature of Fermi-Dirac distribution function in low voltage range. Finally, the total harmonic distortion (THD) of a sample ballistic nano conductor caused from its low voltage nonlinearity is computed via HSPICE simulations.

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Section: Voltage Dependent Resistance Of Ballistic Nano Conductorsmentioning

confidence: 74%

Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity

Yamaçli

2013

Nano-Micro Lett.

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“…For example, Na et al [61] synthesized densely packed CNT arrays on the conductive substrate at 400°C. They were used in large-scale integrated circuits as interconnects to carry high density electric current [149]. The low process-temperature is compatible with other materials which are applied in semiconductor industry.…”

Section: Applicationsmentioning

confidence: 99%

One-Dimensional Carbon Nanostructures: Low-Temperature Chemical Vapor Synthesis and Applications

Yang

Jiang

2016

Carbon Nanoparticles and Nanostructures

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Chemical vapor deposition (CVD) is a powerful method to synthesize various carbon nanostructures (e.g., carbon nanotubes). A conventional CVD process has to be carried out at the temperatures over 600°C. To extend the applications of carbon nanostructures, for example in the semiconductor industry, low-temperature synthesis processes are thus always pursued. In this chapter we review the CVD growth of carbon nanostructures at low temperatures (<450°C). These growth processes are discussed in detail with respect to the applied catalyst system, carbon source, reaction atmosphere, catalyst faces, morphology control as well as unique structural characteristics of grown products. For the low-temperature CVD growth, catalytic reaction occurring on the low index faces of a metal catalyst is a crucial issue, and the growth is rate-limited by surface diffusion. Instead of the classical Vapor-Liquid-Solid (VLS) growth mechanism, the growth mechanism at low temperatures is interpreted with a novel Vapor-Facet-Solid (VFS) mechanism. Due to their unique features, the synthesized carbon nanostructures are promising to be applied for interconnects in large-scale integrated circuits, field emission, microwave adsorption, and as the anode material of lithium ion secondary battery, etc.

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“…8,9 Highly mechanical, thermal, electrical, transport, corrosion-resistant, optical properties and easy integration with organic-inorganic devices make carbon nanotubes (CNT) and graphene potential candidates for future high speed transistors, touch screen panels, solar cells, sensors, and other applications. 10 Similarly, Pb(Zr 1Àx ,Ti x )O 3 (PZT) is a well known ferroelectric/piezoelectric material with robust functional properties for the non-volatile random access memory (NVRAM), and sensor and actuator applications. 11 Both systems have some merits and demerits for the next generation device elements.…”

Section: Introductionmentioning

confidence: 99%

Dynamic nanocrystal response and high temperature growth of carbon nanotube–ferroelectric hybrid nanostructure

2014

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A long standing problem related to the capping of carbon nanotubes (CNT) by inorganic materials at high temperature has been solved. In situ dynamic response of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) nanocrystals attached to the wings of the outer surface of PZT/CNT hybrid-nanostructure has been demonstrated under a constantenergy high-resolution transmission electron microscopy (HRTEM) e-beam. PZT nanocrystals revealed that the crystal orientations, positions, faces, and hopping states change with time. HRTEM study has been performed to investigate the microstructure of hybrid nanostructures and nanosize polycrystal trapped across the wings. Raman spectroscopy was utilized to investigate the local structures, defects, crystal qualities and temperature dependent growth and degradation of hybrid nanostructures. Raman spectra indicate that MWCNT and PZT/MWCNT/n-Si possess good quality of CNT before and after PZT deposition until 650 C. The monoclinic Cc/Cm phase of PZT which is optimum in piezoelectric properties was prominent in the hybrid structure and should be useful for device applications. An unusual hexagonal faceting oscillation of the nano-crystal perimeter on a 10-30 s period is also observed.

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Carbon Nanotubes for VLSI: Interconnect and Transistor Applications

Cited by 97 publications

References 78 publications

Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity

Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity

One-Dimensional Carbon Nanostructures: Low-Temperature Chemical Vapor Synthesis and Applications

Dynamic nanocrystal response and high temperature growth of carbon nanotube–ferroelectric hybrid nanostructure

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