Carbon nanotube via interconnect technologies: size‐classified catalyst nanoparticles and low‐resistance ohmic contact formation

Awano, Yuji; Sato, Shintaro; Kondo, Daiyu; Ohfuti, Mari; Kawabata, Akio; Nihei, Misato; Yokoyama, Naoki

doi:10.1002/pssa.200622415

Cited by 78 publications

(61 citation statements)

References 6 publications

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“…The present status of work on Vias is that Kreupl et al [5,6] of Infineon did the early work on showing nanotube growth out of holes for Vias, but now the present leader is Awano et al [9][10][11] of Fujitsu. They have achieved a MWNT density of over 10 11 cm -2 , and are also working on the contacting problem.…”

Section: Introductionmentioning

confidence: 94%

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Carbon nanotubes for interconnects in VLSI integrated circuits

Robertson¹,

Zhong

Telg

et al. 2008

Physica Status Solidi (b)

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Section: Introductionmentioning

confidence: 94%

“…1) will soon exceed the maximum the maximum allowed by Cu of ~6. 10 6 A.cm -2 before it fails due to electromigration. This is expected to occur at the 22 nm node (Fig.…”

Section: Introductionmentioning

confidence: 98%

Carbon nanotubes for interconnects in VLSI integrated circuits

Robertson¹,

Zhong

Telg

et al. 2008

Physica Status Solidi (b)

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“…Nowadays, electrical mobility analysis is a worldwide used technique to control particle size in gas phase synthesis of nanomaterials under atmospheric pressure conditions in the laboratory (Maisels et al 2002a;Nasibulin et al 2005;Awano et al 2006;Kim and Zachariah 2007). Basically, the aerosol passes first through a device where the particles acquire a charge distribution (aerosol charger) and then enters a Differential Mobility Analyzer (DMA) where particles are classified based on the electrical mobility, which is a function of the particle size, charge, and shape.…”

Section: Introductionmentioning

confidence: 99%

Single Charging of Nanoparticles by UV Photoionization at High Flow Rates

Hontañón

Kruis

2008

Aerosol Science and Technology

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The feasibility of UV photoionization for single unipolar charging of nanoparticles at flow rates up to 100 l·min −1 is demonstrated. The charging level of the aerosol particles can be varied by adjusting the intensity of the UV radiation. The suitability of a UV photocharger followed by a DMA to deliver monodisperse nanoparticles at high aerosol flow rates has been assessed experimentally in comparison to a radioactive bipolar charger ( 85 Kr, 10 mCi). Monodisperse aerosols with particle sizes in the range of 5 to 25 nm and number concentrations between 10 4 and 10 5 cm −3 have been obtained at flow rates up to 100 l·min −1 with the two aerosol chargers. In terms of output particle concentration, the UV photoionizer performs better than the radioactive ionizer with increasing aerosol flow rate. Aerosol charging in the UV photoionizer is described by means of a photoelectric charging model that relies on an empirical parameter and of a diffusion charging model based on the Fuchs theory. The UV photocharger behaved as a quasiunipolar charger for polydisperse aerosols with particles sizes less than 30 nm and number concentrations ∼10 7 cm −3 . Much reduced diffusion charging was observed in the experiments, with respect to the calculations, likely due to ion losses onto the walls caused by unsteady electric fields in the irradiation region.

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“…The resistance of the bundle decreases with diameter, which is to be expected as more CNT can conduct in parallel for larger bundles. The good contact between the CNT and the metals is attributed to the use of Ti 19 , and TiN which is more resilient against oxidation 21 . Besides, we found that due to the lack of any dielectric covering steps of the CNT after growth (using for instance spin-on glass), something which is often used in the literature in combination with chemical mechanical polishing (CMP) 22,23 , the contact resistance to the CNT is low due to embedding of the CNT tips in the top metal 24 .…”

mentioning

confidence: 99%

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Vollebregt

Ishihara

2015

JoVE

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We demonstrate a method for the low temperature growth (350 °C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-κ dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used. Video LinkThe video component of this article can be found at

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Carbon nanotube via interconnect technologies: size‐classified catalyst nanoparticles and low‐resistance ohmic contact formation

Cited by 78 publications

References 6 publications

Carbon nanotubes for interconnects in VLSI integrated circuits

Carbon nanotubes for interconnects in VLSI integrated circuits

Single Charging of Nanoparticles by UV Photoionization at High Flow Rates

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

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