Carbon incorporation in GaAs layer grown by atomic layer epitaxy

Mochizuki, K.; Ozeki, Masashi; Kodama, Kunihiko; Ohtsuka, N.

doi:10.1016/0022-0248(88)90583-0

Cited by 42 publications

(8 citation statements)

References 11 publications

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“…In order to remain within the ALE growth mode, the maximum exposure time to TMGa must be decreased as Tg is increased; there is a stronger tendency for Ga droplet formation at higher values of Tg. In agreement with the results of Mochizuki et al [34], the hole concentration from carbon incorporation increased as the TMGa exposure time (pulse duration) increased, as shown in Fig TMGa exposure time (s) Figure 4 The hole concentration as a function of the TMGa exposure time for growth temperatures of: (11) 500~ (+) 550 ~ and (A) 600 ~ (After [35].) CH4 during the AsH3 exposure step, or a combination of these processes.…”

Section: Intrinsic Carbon Dopingsupporting

confidence: 83%

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Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

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This paper is a review of the incorporation and behaviour of carbon in group III-V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor Profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

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Section: Intrinsic Carbon Dopingsupporting

confidence: 83%

“…Mochizuki et al studied the carbon-incorporation mechanism in GaAs grown with AsH3 and TMGa by ALE [34]. The carbon concentration varied from 1015 cm -3 to 8 x 1018 cm -3, and it depended on the TMGa and AsH3 pulse durations.…”

Section: Intrinsic Carbon Dopingmentioning

confidence: 99%

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

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“…If the InGaAs ALE growth is partially dominated by incomplete AsH 3 decomposition, carbon incorporation is expected to increase due to ineffective removal of methyl radicals [28]. Besides increasing AsH 3 exposure time, carbon incorporation can be reduced by increasing the H 2 purge time after TMGa exposure.…”

Section: Effect Of H 2 Purge and Quality Of Ingaas Layersmentioning

confidence: 99%

Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

Huang

Ryou

Dupuis

2011

Journal of Crystal Growth

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“…In a paper by Mochizuki et al , who quoted values as low as 1 × 10 14 cm -3 , there were a few major differences in the growth cycle for ALE. 11 The two most obvious are the group V mole fraction and the growth rate. To achieve an electron concentration in…”

Section: Disucssionmentioning

confidence: 99%

Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs

Yeo

Arès

Watkins

et al. 1997

Journal of Elec Materi

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We report the use of a new precursor, trisneopentylgallium (NPG) for the growth of GaAs by atomic layer epitaxy (ALE). In contrast to most other alkyl gallium precursors such as triethylgallium, which decompose via a β-hydride elimination mechanism, this compound undergoes homolysis similar to that of trimethylgallium (TMGa), the normal choice as an ALE precursor. Clear selflimiting growth behavior similar to that of TMGa was observed over a reasonably wide range of growth conditions (430-500°C). Carbon incorporation was not significantly reduced compared with TMGa suggesting that the adsorbed neopentyl radicals undergo decomposition to result in a methyl terminated surface identical to that obtained for growth with TMGa.

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Carbon incorporation in GaAs layer grown by atomic layer epitaxy

Cited by 42 publications

References 11 publications

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs

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