Carbon-doped MoS2 nanosheet photocatalysts for efficient degradation of methyl orange

Hai, Zhenyin; Du, Jian-gong; Akbari, Mohammad Karbalaei; Chen, Xue; Xu, Huibin; Zhuiykov, Serge

doi:10.1007/s11581-017-2144-4

Cited by 30 publications

(12 citation statements)

References 20 publications

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“…Previous work has been reported on the incorporation of carbon into several TMDs. For example, rather severe reactions between carbon precursors and MoS 2 have been reported by high-temperature (or long period) treatments of MoS 2 in a carbon-rich environment [C 2 H 2 ( 17 ) or degreasing cotton ( 18 )]. Those reported mixed phases of TMDs and transition metal carbides can be used for electro- or photocatalysis applications ( 17 , 18 ).…”

Section: Introductionmentioning

confidence: 99%

“…For example, rather severe reactions between carbon precursors and MoS 2 have been reported by high-temperature (or long period) treatments of MoS 2 in a carbon-rich environment [C 2 H 2 ( 17 ) or degreasing cotton ( 18 )]. Those reported mixed phases of TMDs and transition metal carbides can be used for electro- or photocatalysis applications ( 17 , 18 ). On the other hand, MoS 2 can be directly converted into molybdenum carbide via high-temperature annealing in a methane environment, thus providing a low resistance and small Schottky barrier height for the Mo 2 C/MoS 2 hybrid structures ( 19 ).…”

Section: Introductionmentioning

confidence: 99%

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Carbon doping of WS ₂ monolayers: Bandgap reduction and p-type doping transport

et al. 2019

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Chemical doping constitutes an effective route to alter the electronic, chemical, and optical properties of two-dimensional transition metal dichalcogenides (2D-TMDs). We used a plasma-assisted method to introduce carbon-hydrogen (CH) units into WS2 monolayers. We found CH-groups to be the most stable dopant to introduce carbon into WS2, which led to a reduction of the optical bandgap from 1.98 to 1.83 eV, as revealed by photoluminescence spectroscopy. Aberration corrected high-resolution scanning transmission electron microscopy (AC-HRSTEM) observations in conjunction with first-principle calculations confirm that CH-groups incorporate into S vacancies within WS2. According to our electronic transport measurements, undoped WS2 exhibits a unipolar n-type conduction. Nevertheless, the CH-WS2 monolayers show the emergence of a p-branch and gradually become entirely p-type, as the carbon doping level increases. Therefore, CH-groups embedded into the WS2 lattice tailor its electronic and optical characteristics. This route could be used to dope other 2D-TMDs for more efficient electronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Carbon doping of WS ₂ monolayers: Bandgap reduction and p-type doping transport

et al. 2019

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“…In addition, low electron/hole recombination is blamed for the low quantum yields, which is still a big obstacle for the improvement of photocatalytic activity. Therefore, fabrication of efficient n-p heterojunctions has been proposed and attempted with the different levels of success during the last few years [4, 17, 20–22]. Specifically, it was found that the fabricated n-p heterojunctions could sufficiently reduce the recombination rate of the photo-generated electron/hole pairs with the following enhancement of the overall photocatalytic activity [1, 23, 24].…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Han

Xia

et al. 2019

Nanoscale Res Lett

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Wafer-scale, conformal, two-dimensional (2D) TiO 2 -Ga 2 O 3 n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO 2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO 2 -Ga 2 O 3 n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO 2 -Ga 2 O 3 n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light ( λ = 254 nm) irradiation. The improvement of TiO 2 -Ga 2 O 3 n-p heterostructure capabilities is due to the development of the defects on Ga 2 O 3 -TiO 2 interface, which were able to trap electrons faster. Graphical Abstract

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“…Carbon atoms have also been used as acceptor dopants for bulk semiconductors. [ 12 ] In TMDs, mixed phases with transition metal carbides have been shown to have applications in catalysis, [ 13,14 ] while in MoS 2 it was shown that carbon substitutions had a strong effect on the TMD electronic and optical properties. [ 15,16 ]…”

Section: Figurementioning

confidence: 99%

“…[ 25 ] Studies have been made on the potential transport applications of TMDs and transition metal carbides. [ 13,26 ] In the case of MoS 2 experiments point to changes to the electronic structure due to carbon doping, which should translate into new optical features. [ 15,27 ]…”

Section: Figurementioning

confidence: 99%

Optical Signatures of Defect Centers in Transition Metal Dichalcogenide Monolayers

2021

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Even the best quality 2D materials have non‐negligible concentrations of vacancies and impurities. It is critical to understand and quantify how defects change intrinsic properties, and use this knowledge to generate functionality. This challenge can be addressed by employing many‐body perturbation theory to obtain the optical absorption spectra of defected transition metal dichalcogenides. Herein metal vacancies, which are largely unreported, show a larger set of polarized excitons than chalcogenide vacancies, introducing localized excitons in the sub‐optical‐gap region, whose wave functions and spectra make them good candidates as quantum emitters. Despite the strong interaction with substitutional defects, the spin texture and pristine exciton energies are preserved, enabling grafting and patterning in optical detectors, as the full optical‐gap region remains available. A redistribution of excitonic weight between the A and B excitons is visible in both cases and may allow the quantification of the defect concentration. This work establishes excitonic signatures to characterize defects in 2D materials and highlights vacancies as qubit candidates for quantum computing.

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Carbon-doped MoS2 nanosheet photocatalysts for efficient degradation of methyl orange

Cited by 30 publications

References 20 publications

Carbon doping of WS ₂ monolayers: Bandgap reduction and p-type doping transport

Carbon doping of WS ₂ monolayers: Bandgap reduction and p-type doping transport

Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Optical Signatures of Defect Centers in Transition Metal Dichalcogenide Monolayers

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Carbon-doped MoS2 nanosheet photocatalysts for efficient degradation of methyl orange

Cited by 30 publications

References 20 publications

Carbon doping of WS 2 monolayers: Bandgap reduction and p-type doping transport

Carbon doping of WS 2 monolayers: Bandgap reduction and p-type doping transport

Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Optical Signatures of Defect Centers in Transition Metal Dichalcogenide Monolayers

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Carbon doping of WS ₂ monolayers: Bandgap reduction and p-type doping transport

Carbon doping of WS ₂ monolayers: Bandgap reduction and p-type doping transport