Carbon Dimers as the Dominant Feeding Species in Epitaxial Growth and Morphological Phase Transition of Graphene on Different Cu Substrates

Wu, Ping; Zhang, Yue; Cui, Ping; Li, Zhenyu; Yang, Jinlong; Zhang, Zhenyu

doi:10.1103/physrevlett.114.216102

Cited by 80 publications

(147 citation statements)

References 30 publications

(44 reference statements)

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“…4 Among them, graphene growth on metal surfaces via chemical vapour deposition (CVD) is a promising way for largescale, inexpensive, high-quality graphene production. 10 Active species for graphene growth is suggested to be of more than one carbon atom 11 and may contain H atoms. 7 Mechanisms of graphene growth on a Cu substrate have been intensively studied theoretically.…”

Section: Introductionmentioning

confidence: 99%

Gas-phase dynamics in graphene growth by chemical vapour deposition

Gan

Huang

2015

Phys. Chem. Chem. Phys.

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Chemical vapour deposition on a Cu substrate is becoming a very important approach to obtain high quality graphene samples. Previous studies of graphene growth on Cu mainly focus on surface processes. However, recent experiments suggest that gas-phase dynamics also plays an important role in graphene growth. In this article, gas-phase processes are systematically studied using computational fluid dynamics. Our simulations clearly show that graphene growth is limited by mass transport under ambient pressures while it is limited by surface reactions under low pressures. The carbon deposition rate at different positions in the tube furnace and the concentration of different gas phase species are calculated. Our results confirm that the previously realized graphene thickness control by changing the position of the Cu foil is a result of gas-phase methane decomposition reactions.

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Section: Introductionmentioning

confidence: 99%

Gas-phase dynamics in graphene growth by chemical vapour deposition

Gan

Huang

2015

Phys. Chem. Chem. Phys.

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“…Figure 2 shows the origin of the mismatch between graphene and the underlying metal crystal structure. The difference in the crystallographic orientation also allows, to some extent, a different growth mechanism, as in the case of Cu (111) where the growth of graphene is surface diffusion limited, whereas for Cu (100), monomer attachment to graphene is restricted [37]. The lattice mismatch can be calculated using the following equation (Eq.…”

Section: Crystallinity and Morphology Of The Substrates Crystallinitymentioning

confidence: 99%

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

et al. 2018

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Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

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“…[90,93,94] These residual motifs are the active species for graphene nucleation and subsequent growth. [90,93,94] These residual motifs are the active species for graphene nucleation and subsequent growth.…”

Section: Determination Of Active Growth Speciesmentioning

confidence: 99%

Section: Brief Overview Of Kinetic Monte Carlo For 2d Materials Growthmentioning

confidence: 99%

Computational Understanding of the Growth of 2D Materials

Gao

Chen

et al. 2018

Advcd Theory and Sims

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Over the last two decades, remarkable progress has been made in use of computational methods for understanding 2D materials growth. The aim of this Review is to provide an overview of several state-of-the-art computational methods for the modelling and simulation of 2D materials growth. First, the current status of 2D materials, and their major growth methods are addressed. Next, the applications of the ab initio method in 2D materials growth is discussed, focusing on reaction of precursors, diffusion of adatoms, energetics and kinetics of growth fronts, and effects of substrates. Then, the applications of the molecular dynamics approach in 2D materials growth is discussed, with emphasis on the growth of graphene on various substrates and the growth of boron nitride and silicene. Furthermore, the applications of the kinetic Monte Carlo method in 2D materials growth are discussed. The parametrization of the method and its application in dimer distribution, and nonlinear edge growth of graphene are discussed. Subsequently, the applications of the phase-field method in 2D materials growth are discussed, focusing on the growth rate and morphological evolution of 2D domains. Finally, perspectives and conclusions are presented.

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Carbon Dimers as the Dominant Feeding Species in Epitaxial Growth and Morphological Phase Transition of Graphene on Different Cu Substrates

Cited by 80 publications

References 30 publications

Gas-phase dynamics in graphene growth by chemical vapour deposition

Gas-phase dynamics in graphene growth by chemical vapour deposition

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

Computational Understanding of the Growth of 2D Materials

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