Capture of photoexcited carriers by a laser structure

Deveaud, B.; Clérot, Fabrice; Regreny, A.; Fujiwara, K.; Mitsunaga, K.; Ohta, Jun

doi:10.1063/1.101962

Cited by 45 publications

(6 citation statements)

References 12 publications

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“…Indeed, when carriers need more time to access the quantum structure than they need to leave it, the temporal response shows the arrival time as a decay time and the leaving time as a rise time. This also assumes very short trapping times in the different quantum structures, in very good agreement with other measurements [14].…”

Section: Vqw Emissionsupporting

confidence: 78%

Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

et al. 2006

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An original time resolved cathodoluminescence set up has been used to investigate the optical properties and the carrier transport in quantum structures located in InGaAs/AlGaAs tetrahedral pyramids. An InGaAs quantum dot formed just below the top of the pyramid is connected to four types of low-dimensional barriers: InGaAs quantum wires on the edges of the pyramid, InGaAs quantum wells on the (111)A facets and segregated AlGaAs vertical quantum wire and AlGaAs vertical quantum wells formed at the centre and at the pyramid edges. Experiments were performed at a temperature of 92 K, an accelerating voltage of 10 kV and a beam probe current of 10 pA. The cathodoluminescence spectrum shows five luminescence peaks. Rise and decay times for the different emission wavelengths provide a clear confirmation of the peak attribution (previously done with other techniques) to the different nanostructures grown in a pyramid. Moreover, experimental results suggest a scenario where carriers diffuse from the lateral quantum structures towards the central structures (the InGaAs quantum dot and the segregated AlGaAs vertical quantum wire) via the InGaAs quantum wires on the edges of the pyramid. According to this hypothesis, we have modeled the carrier diffusion along these quantum wires. An ambipolar carrier mobility of 1400 cm 2 /V s allows to obtain a good fit to all temporal dependences.PACS 78.67.-n IntroductionA complete characterization of a nanostructure involves the investigation of its structural, electronic and optical properties. Different experimental tools for testing the structure of a quantum dot (QD) or a quantum wire (QWR) are employed. We might cite direct imaging methods, such as scanning tunnelling microscopy (STM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) [1]. STM and AFM have in principle atomic resolution and, as well as SEM, are able to reveal directly the morphology of a surface. TEM is used to inspect a nanostructure embedded in its nano-environment. Electronic and optical properties of a single nanostructure are mainly studied with spectroscopic tools. Existing local luminescence probe techniques are [2]: spatially localized micro-photoluminescence spectroscopy (µ-PL) using either strong focusing or masking; near-field optical microscopy (SNOM) to avoid the diffraction limitation of far-field optics; cathodoluminescence (CL), using focused energetic electrons in an electron microscope; and scanning tunneling luminescence (STL), using low-energy electrons injected or extracted from the tip of a STM.When combined with picosecond or femtosecond laser pulses, spectroscopic techniques allow for studying the carriers dynamics in a semiconductor sample. Phenomena as different as carrier capture, energy relaxation, radiative recombination or carrier transport are then accessible [3].In this article we employ an original time resolved cathodoluminescence (TRCL) set-up to investigate the time resolved luminescence of quantum structures ...

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Section: Vqw Emissionsupporting

confidence: 78%

Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

et al. 2006

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“…A correlation between the upper limit of the modulation bandwidth and structural parameters, like the width of the separate-confinement heterostructure ͑SCH͒, has been established by measuring modulation response in the small signal regime, 1,2 or by using optical modulation. 6 Investigations were performed on undoped structures at low temperatures. 4 Time-resolved photoluminescence ͑PL͒ has proven to be especially suitable to study carrier transport in bulk and QW semiconductor structures.…”

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confidence: 99%

Photoexcited carrier transport in InGaAsP/InP quantum well laser structure

Marcinkevičius

Olin

Wallin

et al. 1994

Applied Physics Letters

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Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantumwell structureMeasurements of photoexcited carrier transport in InGaAsP/InP graded-gap separate-confinement quantum well laser structures with a step-like profile of the graded layers are performed by time-resolved photoluminescence using upconversion. In all the investigated structures ambipolar carrier motion can be characterized by a constant velocity of (1.5Ϯ0.2)ϫ10 6 cm/s. The experimental results are discussed in terms of step-driven and ordinary diffusion.

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“…In addition, a slight increase in the PL linewidth for both the exciton and the biexciton is observed at similar densities in Fig. 3b, which can be ascribed to collisional-induced broadening 19 . Figure 3b also depicts the determined bandgap energy that characteristically shifts to lower energy with increasing n because of bandgap renormalization (BGR).…”

Section: Nature Communications | Doimentioning

confidence: 61%

“…2c) features a characteristic plateau-like QW emission that extends from the biexciton emission energy continuously up to the barrier energy. The saturation of the emission amplitude at early delays is the direct signature of k-space filling of the constant 2D density-of-states and indicates the presence of a degenerate e-h plasma in the QW 19 . For the high-injection PL spectra at early time delays, that is within the first 300 ps, an e-h plasma lineshape fitting following the model discussed in refs 11,20 was employed (cf.…”

Section: Resultsmentioning

confidence: 99%