Photoexcited carrier transport in InGaAsP/InP quantum well laser structure

Abstract

Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantumwell structureMeasurements of photoexcited carrier transport in InGaAsP/InP graded-gap separate-confinement quantum well laser structures with a step-like profile of the graded layers are performed by time-resolved photoluminescence using upconversion. In all the investigated structures ambipolar carrier motion can be characterized by a constant velocity of (1.5Ϯ0.2)ϫ10 6 cm/s. The experimental results are discussed in terms of step-driven and ordinary diffusion.

Electron relaxation and capture in InGaAsP quantum well laser structures

“…This is also indirectly confirmed by the fact that we obtain identical times for the GRINSCH and the SCH in which carrier transport times should be different. 1 The measured capture time is rather close to the recent results obtained by time-resolved PL measurements for the InGaAs/InP ͑0.8 ps, Ref. 7͒ and GaAs/AlGaAs ͑1.8 ps, Ref.…”

Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells

“…Parabolic structures are well known in designing infrared detectors with low leak currents and low electricfield sensitivity. [6,7] VQWs have some unique properties, which cannot be obtained with conventional QWs, including the sensitivity of the intersubband absorption for the normal incident lights. [8] Furthermore, VQWs have potential applications in novel semiconductor diode laser [9] as well as in infrared optoelectronics based on intersubband QW transitions.…”