Capture and escape in quantum wells as scattering events in Monte Carlo simulation

Articles you may be interested inElectron spin relaxation time in GaAs/AlGaAs multiple quantum wells grown on slightly misoriented GaAs(110) substrates Appl. Phys. Lett. 97, 081111 (2010); 10.1063/1.3483768 Determination of the electron capture time in quantum-well infrared photodetectors using time-resolved photocurrent measurements Monte Carlo modeling of electron velocity overshoot effect in quantum well infrared photodetectors J. Appl. Phys. 84, 3403 (1998); 10.1063/1.368499 Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Section: Introductionmentioning

confidence: 99%

Monte Carlo calculation of the electron capture time in single quantum wells

Abou-Khalil

Goano

Reid

et al. 1997

“…Our Monte Carlo model is based on a three band simulation of carrier transport in semiconductors 15,16,28 and on a self-consistent Poisson solver using the Cloud-In-Cell mesh charge assignment. 29,30 To simulate the transport of free carriers in the structure, we use the bulk scattering processes such as the acoustic and polar optical phonon scattering, alloy scattering, ionized impurities scattering intervalley scattering, following the expression of Fawcett et al 31 and Glisson et al 32 and electron-electron scattering following the expression of Goodnick and Lugli.…”

Section: Monte Carlo Algorithmmentioning

confidence: 99%

“…15,16 The scattering rates for those processes were calculated with quantum mechanics as functions of the initial carrier energy and all the capture and escape scatterings into and from the confined subbands were considered as independent events in compliance with the probabilistic nature of the method. In this paper, we present an application of those capture and escape procedures for the simulation of the nonlinear characteristics of a planar-doping lattice-matched ͑LM͒ InP based HEMT.…”

Section: Introductionmentioning

confidence: 99%

Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Abou-Khalil

Schreurs

Nauwelaers

et al. 1997

Self Cite

Articles you may be interested inHigh mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors J. Appl. Phys. 95, 8271 (2004); 10.1063/1.1745119 Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors J. Appl. Phys. 94, 4096 (2003); 10.1063/1.1603955 Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors Monte Carlo modeling of electron velocity overshoot effect in quantum well infrared photodetectors

“…In recent years, simulations have been performed of nonequilibrium carrier transport, including thermalization and quantum capture, in quantum-well structures. [21][22][23][24][25] But to our knowledge, no work has been done which includes radiative and nonradiative carrier recombinations in a Monte Carlo calculation. In this article, a multiple-quantum-well structure under high optical injection is modeled using a semiclassical Monte Carlo simulation in which carrier recombination is included.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure

Güçlü

Rejeb

Maciejko

et al. 1999

Self Cite

Carrier transport and recombination in a strained InGaAsP/InP multiple-quantum-well structure emitting at 1.55 m are investigated experimentally and theoretically using both time-resolved photoluminescence and Monte Carlo simulations. A method for including carrier recombination in a Monte Carlo simulation is described. The calculated spectra are in good agreement with the experimental results. They show that nonradiative recombination is the principal recombination process in the first 100 ps and that the screened electron-phonon interactions are responsible for the high luminescence from the quantum-well higher-energy levels.