Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Abstract

Articles you may be interested inHigh mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors J. Appl. Phys. 95, 8271 (2004); 10.1063/1.1745119 Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors J. Appl. Phys. 94, 4096 (2003); 10.1063/1.1603955 Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors Monte Carlo modeling of electron velocity overshoot effect in quantum well infrared photodetectors