Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

Abstract

We derived expressions for the scattering rates due to dislocations in pseudomorphic heterostructures. We gave explicit formulas for those scattering rates in the free and the confined states, depending on the initial carrier energy and on the component of the total wave vector parallel to the dislocations. We demonstrated that this new scattering process could affect the electron mean velocity by more than 30% from the ideal case treated commonly by the Monte Carlo simulators.

Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

“…The estimated threading dislocation scattering rate using the data in ref. [16] is on the order of about 10 13 s −1 . From the above, it follows that threading dislocation scattering has a greater effect on electron mobility than alloy scattering.…”

“…Threading dislocations are generated in strained semiconductors, which serve as an electron scattering source. [16,17] Figure 6 shows the relationship between In content x of Ga 1Àx In x Sb channel and threading dislocation density (TDD) obtained by the atomic force microscope (AFM) images in addition to the μ data. Error bars are also attached to the TDD data.…”

“…The alloy scattering rate is small compared to the threading dislocation scattering rate. [ 16 ] Furthermore, the alloy scattering rate is proportional to x (1− x ). [ 19 ] Therefore, the alloy scattering rate increases with decreasing In content x from 1.0 to 0.5, which differs from the electron mobility trend.…”