Monte Carlo calculation of the electron capture time in single quantum wells

Abstract

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Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

“…5͑b͒ we also observe that through the capture transitions, electrons are first captured into higher energy subbands ͑subbands 7 and 8͒ and then they are transferred rapidly into lower subbands through the intersubband transitions. This behavior of the electron capture in the channel is similar to the capture behavior in quantum-well structures presented in our previous work, 16 where we demonstrated that capture of carriers from free state into the confined subbands is mainly controlled by the transitions from the 3D state into the highest energy levels. The capture into lowest energy levels in the well is controlled by the intresubband transitions.…”

“…Due to the applied gate voltage, we observed large variations in the electric field on both sides of the channel, in regions beneath the gate contact. On the other hand, since the electron capture time in a quantum well of 200 Å width could be estimated to about 15 ps, such as we demonstrated in a previous work, 16 electrons in the channel region occupy the free state 3D long enough to be affected by those field variations. Hence, we assumed that electrons in the channel arrive in the form of right and left incident electron flow and we calculated the total capture and escape scattering rates as the mean values of the rates for right and left incident independently.…”

“…Our Monte Carlo model is based on a three band simulation of carrier transport in semiconductors 15,16,28 and on a self-consistent Poisson solver using the Cloud-In-Cell mesh charge assignment. 29,30 To simulate the transport of free carriers in the structure, we use the bulk scattering processes such as the acoustic and polar optical phonon scattering, alloy scattering, ionized impurities scattering intervalley scattering, following the expression of Fawcett et al 31 and Glisson et al 32 and electron-electron scattering following the expression of Goodnick and Lugli.…”

“…15,16 The scattering rates for those processes were calculated with quantum mechanics as functions of the initial carrier energy and all the capture and escape scatterings into and from the confined subbands were considered as independent events in compliance with the probabilistic nature of the method. In this paper, we present an application of those capture and escape procedures for the simulation of the nonlinear characteristics of a planar-doping lattice-matched ͑LM͒ InP based HEMT.…”

Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure

“…In recent years, simulations have been performed of nonequilibrium carrier transport, including thermalization and quantum capture, in quantum-well structures. [21][22][23][24][25] But to our knowledge, no work has been done which includes radiative and nonradiative carrier recombinations in a Monte Carlo calculation. In this article, a multiple-quantum-well structure under high optical injection is modeled using a semiclassical Monte Carlo simulation in which carrier recombination is included.…”