Capacitively Loaded Inverted CPWs for Distributed TRL-Based De-Embedding at (Sub) mm-Waves

Galatro, L.; Pawlak, Andreas; Schröter, M.; Spirito, M.

doi:10.1109/tmtt.2017.2727498

Cited by 24 publications

(15 citation statements)

References 26 publications

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“…On-wafer TRL (and multiline-TRL) calibration was applied. Again Galatro et al [16] have designed an onwafer calibration-kit dedicated to transistor characterization. Measurement results are shown from 220 GHz up to 325 GHz.…”

mentioning

confidence: 99%

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Fregonèse

Matos

Deng

et al. 2018

IEEE Trans. Microwave Theory Techn.

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This paper investigates on-wafer characterization of SiGe HBTs up to 500 GHz. Test structures for on-wafer TRL calibration have been designed and are presented. The TRL calibration method with silicon standards has first been benchmarked through EM-simulation. Passive and active components are then characterized up to 500 GHz. The slight discontinuities between the frequency bands are explored. A specific focus was placed on incorrect horizontal probe positioning as well as on probe deformation, resulting in a better assessment of possible measurement errors.

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mentioning

confidence: 99%

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Fregonèse

Matos

Deng

et al. 2018

IEEE Trans. Microwave Theory Techn.

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“…Above 70 GHz, the characterization of transistors on Siwafers becomes more challenging [6]. Only very few demonstrations of transistor measurements at higher frequencies have been performed on silicon substrates [5], [7]- [10]. Voinigescu et al [8] have demonstrated measurements up to 325 GHz of an advanced SiGe HBT (hetero-junction bipolar transistor) and have shown results of parameters S21 and H21 along with the maximum available gain MAG.…”

Section: Calibration and De-embedding Methodsmentioning

confidence: 99%

“…The addition of matrix manipulation together with supplementary measurement amplifies the measurement error, complicates and degrades the overall measurement quality of the transistor especially when probe contact difficulties come into play. To circumvent or reduce this problem, Galatro et al [7] have proposed the design of low loss lines at the M1 level to define the reference plane exactly at the transistor level. The proposed calibration/de-embedding kit contains capacitively loaded inverted CPW lines, allowing to reduce the losses generated by the conductive (i.e., silicon) substrate, by confining the propagating field in the low-loss dielectric layers (see Fig.…”

Section: Innovative Approach For Calibration Linesmentioning

confidence: 99%

“…When building the calibration kit, the positioning of the individual test structures on the chip (floorplan) should not be neglected. Williams et 2013 mention: "These three standards were placed 150 µm apart to reduce the direct coupling between the calibration standards, and allow the crosstalk between the probes and the access lines to be characterized and at least partially removed from the measurements, as explained in [7]". Also Schmückle et al [21] have evidently underlined the influence of the neighboring structure on the measurement accuracy.…”

Section: Floorplanmentioning

confidence: 99%

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THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

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“…However, above 50-100 GHz, this characterization approach suffers from high measurement uncertainties due to difference of dielectric constant between the calibration kit and the silicon wafer, and also the coupling between the probes and the silicon wafer [1,2]. To overcome these issues, some authors propose to integrate an on-wafer calibration kit together with the DUT (Device Under Test) [3]. However, the synthesis of wideband 50 Ω loads, needed for Load-Reflect-Reflect-Match (LRRM) [4] or Through-Reflect-Match (TRM) [5] calibration, is a cumbersome issue in the mm-wave band due to the sensitivity to parasitic effects and dispersion.…”

Section: Introductionmentioning

confidence: 99%

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

Margalef‐Rovira

Saadi

Bourdel

et al. 2020

2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)

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In this paper, an innovative millimeter-wave (mmwave) through-load switch for in-situ reflectometers and on-wafer calibration is proposed. This two-port device can switch between two states: (i) a through connection or (ii) a 50 Ω load for both of its ports. The through-load switch is composed of a 3-dB directional coupler and two nMOS transistors controlled through a biasing voltage applied to their gate. Measurement results of a 120-GHz 3-dB directional coupler are provided up to 145 GHz together with EM simulations and circuit-level simulations up to 220 GHz of the through-load switch. A wide bandwidth is obtained, from 73 GHz to 179 GHz, with limited insertion loss of 2 dB.

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Capacitively Loaded Inverted CPWs for Distributed TRL-Based De-Embedding at (Sub) mm-Waves

Cited by 24 publications

References 26 publications

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

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