Capacitance Transient Spectroscopy

Miller, G. L.; Lang, D. V.; Kimerling, Lionel C.

doi:10.1146/annurev.ms.07.080177.002113

Cited by 552 publications

(123 citation statements)

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“…refers to only a tentative assignment. HB1, HB2 and HB3 are primary defects that are created during electron irradiation, and HB2 and HB3 can be attributed to the divacancy (V-V) [7] and the C i -O i complex respectively [8]. HB4 and HB5 are secondary defects that are detected only after the irradiated samples have been annealed at 100 °C.…”

Section: Electronic Properties Of Defectsmentioning

confidence: 99%

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Nyamhere

Deenapanray

Auret

et al. 2006

Physica B: Condensed Matter

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We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B-and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

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Section: Electronic Properties Of Defectsmentioning

confidence: 99%

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Nyamhere

Deenapanray

Auret

et al. 2006

Physica B: Condensed Matter

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“…The specifics of MOS structure wiIl be also discussed where applicable. Let us consider the space-charge region (SCR) of a reverse biased p+-n junction or a Schottlq barrier on n-type semiconductor [161]. In Fig.…”

Section: 4 1 Capacitance Namientmentioning

confidence: 99%

“…Chapter 2: Review of the DLTS Method method can possïbly provide superior raw data" [161]. Indeed, the ability "to see" the recorded transient without noise allows the emission rate to be exactly determined at afied temperature by simply cdculating the slope of the signal on a semi-logarithmic plot.…”

Section: The Digital Aiternativementioning

confidence: 99%

“…Within that part of the SCR the electronic transition will be entirely an emission process since there are no free electrons and the capture rate will be zero [223]. More complicated is the situation in the transition region at y e < w where both generation and recombination processes contribute to the equilibrium occupation of the deep level traps [161]. One quasi-neud region in the bulk is not abrupt, but has some width detemiined frorn the diffusion of free electrons into the SCR.…”

Section: 4 1 Capacitance Namientmentioning

confidence: 99%

“…Histoncally, the analog methods were implemented f k s t The fdtering function of the "rate window" is a linear operation [161] over the emission rate e(t) Fig. 2.12. A good cornparison has been reported in Refs.…”

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confidence: 99%

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Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Kolev

Deen

1999

Advances in Imaging and Electron Physics

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This manuscript has been reproduced frorn the microfilm master. UMI films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be frorn any type of computer printer.The quality of this reproduction i s dependent upon the quality of the copy submitted. Broken or indistinct ptint, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction.In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized wpwght material had to be removed, a note will indicate the deletion.Oversize materials (e-g., maps, drawings, charts) are reproduced by sedioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overlaps. Each original is also photographed in one exposure and is included in reduced form at the back of the book.Photographs included in the original manuscript have been reproduced xerographically in this copy. Higher quality 6" x 9" black and white photographic prints are available for any photographs or illustrations appearing in this w p y for an additional charge. Contact UMI directly to order. The author has granted a nonexclusive licence allowing the National Library of Canada to reproduce, loîn, distribute or sell copies of this thesis in microform, paper or electronic formats.The author retains ownership of the copyright in this thesis. Neither the thesis nor substantial extracts fiom it may be printed or othenirise reproduced without the author's permission.L'auteur a accordé une licence non exclusive permettant à la Bibliothéque nationale du Canada de reproduire, prêter, distribuer ou vendre des copies de cette thèse sous la forme de microfiche!film, de reproduction sur papier ou sur format électronique.L'auteur conserve la propriété du droit d'auteur qui protège cette thèse. Ni fa thèse ni des extraits substantiels de celle-ci ne doivent être imprimés ou autrement reproduits sans son autorisation, AbstractIn this thesis, we report new advancements in the field of Deep Level Transient Spectroscopy (DLTS) which is a powerfûl method for investigation of elecûically active point defects in semiconductors. We demonstrate these advancements by building a stateof-the-art DLTS system and perfonning extensive measurements on several types of fieldeffec t transis tors (FETs) .We iltroduce a new approach to digital signal processing in DLTS systems. The problems of signal recovery from noise and efficient data storage are addressed separately from the transient signal analysis. We combine two complementary digital averaging techniques which substantially improve the DLTS digital signal processing. Compared to other digital D U S systems, the new averaging techniques offer an improved time resolution at the beginning of the transient, improved signal-to-noise ratio, and more efficient data stor...

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Deep‐Level Transient Spectroscopy

Tin¹

2002

Characterization of Materials

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Defects are responsible for many different characteristic properties of a semiconductor. They play a critical role in determining the viability of a given material for device applications. The identification and control of defects have always been among the most important and crucial tasks in materials and electronic device development. The performance and reliability of devices can be significantly affected by only minute concentrations of undesirable defects. Since the determination of the type and quality of defects in a material depends on the sensitivity of a characterization technique, the challenge in materials characterization has been to develop detection methods with improved sensitivity. Deep‐level transient spectroscopy (DLTS) probes the temperature dependence of the charge carriers escaping from trapping centers formed by point defects in the material. This technique is able to characterize each type of trapping center by providing the activation energy of the defect level relative to one of the energy band edges and the capture cross‐section of the traps. It can also be used to compute the concentration and depth profile of the trapping centers. The spectroscopic nature of DLTS is a key feature that provides both convenience and sensitivity. Deep‐level transient spectroscopy has been widely used for many different semiconductors. This technique has distinguished itself in contributing to the resolution of many defect‐related problems in several technologically important semiconductors such as silicon, the Group III to V and II to VI compounds, and alloys. Many variations of basic DLTS have also been developed for improved sensitivity and for more specialized applications in device structures different from the normal p‐n or Schottky barrier diodes. Deep‐level transient spectroscopy is not able to determine the chemistry or the origin of a defect. Deep‐level transient spectroscopy data should therefore be used in conjunction with other techniques. A successful study of defects requires the concerted efforts of many researchers using various characterization techniques in order to derive a more accurate and consistent picture of the defect structure of a given material.

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Capacitance Transient Spectroscopy

Cited by 552 publications

References 3 publications

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Deep‐Level Transient Spectroscopy

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