This article describes a new variation of a deep-level transient spectroscopy (DLTS) technique convenient for the measurement of submicron field-effect transistors where standard capacitance DLTS cannot be used. Constant-resistance (CR) DLTS is similar to the conductance DLTS, but it is more sensitive and it does not require simultaneous measurement of the transconductance gm or surface mobility μ for calculation of the trap concentrations. In addition, the DLTS signal is largely independent of the transistor size, thus allowing measurements of very small-size transistors. The proposed technique is not restricted to metal-oxide-semiconductor field-effect transistors, but can be used also to study other field-effect transistors.
Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.
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A new variation of deep-level transient spectroscopy, suitable for depletion-mode field-effect transistors, is presented. It is similar to the conductance deep-level transient spectroscopy but does not require simultaneous measurement of the transconductance or the mobility for calculation of the trap concentrations. It is also independent of the transistor size and is very sensitive. The technique is demonstrated with measurements of radiation-induced traps in buried channel metal-oxide-semiconductor field-effect transistors which are used as output amplifiers in charge-coupled device imagers. The unique structure of these transistors offers extended opportunities for studying the space distribution of the radiation-induced defects. In addition, we show a variation of the new transient iechnique using back-gate driving, which is applicable for studying the channel-substrate p-n junction, and the results are compared with those obtained from constant-capacitance voltage-transient measurements. Complementary measurements using front-gate and back-gate operation of the new technique can help to resolve the ambiguities usually associated with deep-level transient spectroscopy measurements of symmetrical p-n diodes.* Electrochemical Society Student Member.
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