Constant-resistance deep-level transient spectroscopy in submicron metal-oxide-semiconductor field-effect transistors

Abstract

This article describes a new variation of a deep-level transient spectroscopy (DLTS) technique convenient for the measurement of submicron field-effect transistors where standard capacitance DLTS cannot be used. Constant-resistance (CR) DLTS is similar to the conductance DLTS, but it is more sensitive and it does not require simultaneous measurement of the transconductance gm or surface mobility μ for calculation of the trap concentrations. In addition, the DLTS signal is largely independent of the transistor size, thus allowing measurements of very small-size transistors. The proposed technique is not restricted to metal-oxide-semiconductor field-effect transistors, but can be used also to study other field-effect transistors.

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

“…Alternatively, the change in I D at constant V G may be recorded. 20,35 Knowledge of ⌬V th , however, allows comparison of the extracted step heights with the "reference value" obtained from the charge-sheet approximation.…”

Nanobonding: A key technology for emerging applications in health and environmental sciences

“…As shown, the biosensing system includes control, signal conditioning and signal processing electronics [54][55][56][57] to improve the quality of sensed signal. It also includes a lowpower, low-cost silicon-based wireless transceiver [58][59][60][61][62] to send information from the sensing environment (e.g., a rural area) to an urban center where appropriate actions can be taken if pathogens are present in the water sample.…”

“…74,75) We have also developed data and signal processing electronics. [54][55][56][57] These individual components or systems, together with others being developed (such as lasers, and antennas), in diverse technologies (silicon, GaAs, InP, glass or polymer, etc.) must be integrated and bonded to create compact, high-performance bioimaging systems.…”

Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

“…However, recent developments in constant-resistance DLTS on deep submicrometer MOSFETs have demonstrated its feasibility for the analysis of deep levels. 36 1/f or flicker noise.-In deep submicrometer MOSFETs, one usually finds a combination of GR/RTS and 1/f noise. The origin of RTS has been generally ascribed to near-interface oxide traps interacting with the inversion layer channel, but the interpretation is less clear for the flicker noise component.…”