Capacitance Models Of Algan/Gan High Electron Mobility Transistors

Douara, Abdelmalek; Kermas, N.; Djellouli, B.

doi:10.5281/zenodo.1123731

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2023

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“…Compound materials from group III-N achieved significant progress in optoelectronic devices for a broad range of applications [1][2][3][4][5][6]. The AlGaN/GaN HEMTs have been successfully used for high power, high speed and high temperature operations [7,8], because its properties are consistent for high frequency and power that allow obtaining extremely high power densities in RF HEMT [9]. However, by switching the AlGaN barrier layer with InAlN, the device performance may still be improved [10].…”

Section: Introductionmentioning

confidence: 99%

Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices

2023

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Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effet of AlN interlayer on the electronic and electric characteristics using the Nextnano simulation software. The 2D–electron gas density of In0.17Al0.83N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness, we report calculations of I-V characteristics, with 1.5 nm AlN thickness, we find the highest maximum output current of 1.81 A/mm at Vgs 1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data.

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